Carrier-carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

K. Matsuda, K. Ikeda, Toshiharu Saiki, H. Saito, K. Nishi

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

A carrier-carrier interaction in self-assembled In0.5Ga 0.5As quantum dots (QD) at room temperature was described. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density were also investigated. The near-field single quantum dot photoluminescence spectroscopy was used.

Original languageEnglish
Pages (from-to)2250-2252
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number11
DOIs
Publication statusPublished - 2003 Sep 15

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optical microscopes
near fields
quantum dots
scanning
room temperature
interactions
photoluminescence
ground state
shift
spectroscopy
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Carrier-carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope. / Matsuda, K.; Ikeda, K.; Saiki, Toshiharu; Saito, H.; Nishi, K.

In: Applied Physics Letters, Vol. 83, No. 11, 15.09.2003, p. 2250-2252.

Research output: Contribution to journalArticle

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