Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment

Kohei M Itoh, T. Kinoshita, J. Muto, N. M. Haegel, W. Walukiewicz, O. D. Dubon, J. W. Beeman, E. E. Haller

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have developed a theoretical model describing carrier scattering by divalent impurities in semiconductors. The mobility predicted by the model based on the scattering of electrons by helium atoms shows excellent agreement with the low-temperature mobilities measured for three Ge samples doped with different double acceptors; Be, Zn, and Hg. We show that the scattering cross sections of these double acceptors are the same despite the large difference in ionization energies. This supports our assumption that the contribution of the central-cell potential to neutral impurity scattering is negligible.

Original languageEnglish
Pages (from-to)1906-1910
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume56
Issue number4
Publication statusPublished - 1997 Jul 15

Fingerprint

Scattering
Impurities
Semiconductor materials
impurities
scattering
Experiments
helium atoms
scattering cross sections
Helium
Ionization potential
ionization
cells
Atoms
Electrons
electrons
energy
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Itoh, K. M., Kinoshita, T., Muto, J., Haegel, N. M., Walukiewicz, W., Dubon, O. D., ... Haller, E. E. (1997). Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment. Physical Review B - Condensed Matter and Materials Physics, 56(4), 1906-1910.

Carrier scattering by neutral divalent impurities in semiconductors : Theory and experiment. / Itoh, Kohei M; Kinoshita, T.; Muto, J.; Haegel, N. M.; Walukiewicz, W.; Dubon, O. D.; Beeman, J. W.; Haller, E. E.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 56, No. 4, 15.07.1997, p. 1906-1910.

Research output: Contribution to journalArticle

Itoh, KM, Kinoshita, T, Muto, J, Haegel, NM, Walukiewicz, W, Dubon, OD, Beeman, JW & Haller, EE 1997, 'Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment', Physical Review B - Condensed Matter and Materials Physics, vol. 56, no. 4, pp. 1906-1910.
Itoh, Kohei M ; Kinoshita, T. ; Muto, J. ; Haegel, N. M. ; Walukiewicz, W. ; Dubon, O. D. ; Beeman, J. W. ; Haller, E. E. / Carrier scattering by neutral divalent impurities in semiconductors : Theory and experiment. In: Physical Review B - Condensed Matter and Materials Physics. 1997 ; Vol. 56, No. 4. pp. 1906-1910.
@article{b5ef0b0928c94597bb12c05aeff921df,
title = "Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment",
abstract = "We have developed a theoretical model describing carrier scattering by divalent impurities in semiconductors. The mobility predicted by the model based on the scattering of electrons by helium atoms shows excellent agreement with the low-temperature mobilities measured for three Ge samples doped with different double acceptors; Be, Zn, and Hg. We show that the scattering cross sections of these double acceptors are the same despite the large difference in ionization energies. This supports our assumption that the contribution of the central-cell potential to neutral impurity scattering is negligible.",
author = "Itoh, {Kohei M} and T. Kinoshita and J. Muto and Haegel, {N. M.} and W. Walukiewicz and Dubon, {O. D.} and Beeman, {J. W.} and Haller, {E. E.}",
year = "1997",
month = "7",
day = "15",
language = "English",
volume = "56",
pages = "1906--1910",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "4",

}

TY - JOUR

T1 - Carrier scattering by neutral divalent impurities in semiconductors

T2 - Theory and experiment

AU - Itoh, Kohei M

AU - Kinoshita, T.

AU - Muto, J.

AU - Haegel, N. M.

AU - Walukiewicz, W.

AU - Dubon, O. D.

AU - Beeman, J. W.

AU - Haller, E. E.

PY - 1997/7/15

Y1 - 1997/7/15

N2 - We have developed a theoretical model describing carrier scattering by divalent impurities in semiconductors. The mobility predicted by the model based on the scattering of electrons by helium atoms shows excellent agreement with the low-temperature mobilities measured for three Ge samples doped with different double acceptors; Be, Zn, and Hg. We show that the scattering cross sections of these double acceptors are the same despite the large difference in ionization energies. This supports our assumption that the contribution of the central-cell potential to neutral impurity scattering is negligible.

AB - We have developed a theoretical model describing carrier scattering by divalent impurities in semiconductors. The mobility predicted by the model based on the scattering of electrons by helium atoms shows excellent agreement with the low-temperature mobilities measured for three Ge samples doped with different double acceptors; Be, Zn, and Hg. We show that the scattering cross sections of these double acceptors are the same despite the large difference in ionization energies. This supports our assumption that the contribution of the central-cell potential to neutral impurity scattering is negligible.

UR - http://www.scopus.com/inward/record.url?scp=0642364683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0642364683&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0642364683

VL - 56

SP - 1906

EP - 1910

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

ER -