TY - JOUR
T1 - Carrier scattering by neutral divalent impurities in semiconductors
T2 - Theory and experiment
AU - Itoh, K.
AU - Kinoshita, T.
AU - Muto, J.
AU - Haegel, N.
AU - Walukiewicz, W.
AU - Dubon, O.
AU - Beeman, J.
AU - Haller, E.
PY - 1997
Y1 - 1997
N2 - We have developed a theoretical model describing carrier scattering by divalent impurities in semiconductors. The mobility predicted by the model based on the scattering of electrons by helium atoms shows excellent agreement with the low-temperature mobilities measured for three Ge samples doped with different double acceptors; Be, Zn, and Hg. We show that the scattering cross sections of these double acceptors are the same despite the large difference in ionization energies. This supports our assumption that the contribution of the central-cell potential to neutral impurity scattering is negligible.
AB - We have developed a theoretical model describing carrier scattering by divalent impurities in semiconductors. The mobility predicted by the model based on the scattering of electrons by helium atoms shows excellent agreement with the low-temperature mobilities measured for three Ge samples doped with different double acceptors; Be, Zn, and Hg. We show that the scattering cross sections of these double acceptors are the same despite the large difference in ionization energies. This supports our assumption that the contribution of the central-cell potential to neutral impurity scattering is negligible.
UR - http://www.scopus.com/inward/record.url?scp=0642364683&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0642364683&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.56.1906
DO - 10.1103/PhysRevB.56.1906
M3 - Article
AN - SCOPUS:0642364683
SN - 1098-0121
VL - 56
SP - 1906
EP - 1910
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 4
ER -