Abstract
The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 2916-2918 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2003 Apr 28 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors. / Uchida, Ken; Takagi, Shin ichi.
In: Applied Physics Letters, Vol. 82, No. 17, 28.04.2003, p. 2916-2918.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors
AU - Uchida, Ken
AU - Takagi, Shin ichi
PY - 2003/4/28
Y1 - 2003/4/28
N2 - The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.
AB - The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.
UR - http://www.scopus.com/inward/record.url?scp=0037621572&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037621572&partnerID=8YFLogxK
U2 - 10.1063/1.1571227
DO - 10.1063/1.1571227
M3 - Article
AN - SCOPUS:0037621572
VL - 82
SP - 2916
EP - 2918
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 17
ER -