Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

Ken Uchida, Shin ichi Takagi

    Research output: Contribution to journalArticle

    137 Citations (Scopus)

    Abstract

    The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.

    Original languageEnglish
    Pages (from-to)2916-2918
    Number of pages3
    JournalApplied Physics Letters
    Volume82
    Issue number17
    DOIs
    Publication statusPublished - 2003 Apr 28

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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