Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

Ken Uchida; Shin ichi Takagi

doi:10.1063/1.1571227

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

Ken Uchida, Shin ichi Takagi

Research output: Contribution to journal › Article › peer-review

148 Citations (Scopus)

Abstract

The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.

Original language	English
Pages (from-to)	2916-2918
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	17
DOIs	https://doi.org/10.1063/1.1571227
Publication status	Published - 2003 Apr 28

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{7ae50f77430849b2bfa03d8b9d5d4ac1,

title = "Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors",

abstract = "The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.",

author = "Ken Uchida and Takagi, {Shin ichi}",

year = "2003",

month = apr,

day = "28",

doi = "10.1063/1.1571227",

language = "English",

volume = "82",

pages = "2916--2918",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

AU - Uchida, Ken

AU - Takagi, Shin ichi

PY - 2003/4/28

Y1 - 2003/4/28

N2 - The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.

AB - The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0037621572&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037621572&partnerID=8YFLogxK

U2 - 10.1063/1.1571227

DO - 10.1063/1.1571227

M3 - Article

AN - SCOPUS:0037621572

VL - 82

SP - 2916

EP - 2918

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

Abstract

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