Abstract
The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.
Original language | English |
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Pages (from-to) | 2916-2918 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2003 Apr 28 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)