Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

Ken Uchida, Shin ichi Takagi

Research output: Contribution to journalArticle

133 Citations (Scopus)

Abstract

The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.

Original languageEnglish
Pages (from-to)2916-2918
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number17
DOIs
Publication statusPublished - 2003 Apr 28
Externally publishedYes

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metal oxide semiconductors
field effect transistors
insulators
electric potential
silicon
scattering
capacitance

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors. / Uchida, Ken; Takagi, Shin ichi.

In: Applied Physics Letters, Vol. 82, No. 17, 28.04.2003, p. 2916-2918.

Research output: Contribution to journalArticle

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