Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

Ken Uchida; Shin ichi Takagi

doi:10.1063/1.1571227

Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide-semiconductor field-effect transistors

Ken Uchida, Shin ichi Takagi

Research output: Contribution to journal › Article › peer-review

137 Citations (Scopus)

Abstract

The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.

Original language	English
Pages (from-to)	2916-2918
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	17
DOIs	https://doi.org/10.1063/1.1571227
Publication status	Published - 2003 Apr 28

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The carrier transport mechanism induced by thickness fluctuation of silicon-on-insulator (SOI) film in ultrathin-body (UTB) metal-oxide-semiconductor field-effect transistors (MOSFET) was studied. The effective mobility was determined from the drain conductance measured at the drain voltage of 5 mV. The surface carrier concentration was determined from the gate-channel capacitance versus gate voltage characteristics.",

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