Carrier transport and stress engineering in advanced nanoscale MOS transistors

Ken Uchida, Masumi Saitoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Subband structure engineering to enhance mobility as well as ballistic current is also examined.

Original languageEnglish
Title of host publicationInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages6-7
Number of pages2
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China
Duration: 2009 Apr 272009 Apr 29

Other

Other2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan, Province of China
CityHsinchu
Period09/4/2709/4/29

Fingerprint

Carrier transport
MOSFET devices
transistors
field effect transistors
engineering
Ballistics
ballistics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Uchida, K., & Saitoh, M. (2009). Carrier transport and stress engineering in advanced nanoscale MOS transistors. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings (pp. 6-7). [5159267] https://doi.org/10.1109/VTSA.2009.5159267

Carrier transport and stress engineering in advanced nanoscale MOS transistors. / Uchida, Ken; Saitoh, Masumi.

International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2009. p. 6-7 5159267.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, K & Saitoh, M 2009, Carrier transport and stress engineering in advanced nanoscale MOS transistors. in International Symposium on VLSI Technology, Systems, and Applications, Proceedings., 5159267, pp. 6-7, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, Province of China, 09/4/27. https://doi.org/10.1109/VTSA.2009.5159267
Uchida K, Saitoh M. Carrier transport and stress engineering in advanced nanoscale MOS transistors. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2009. p. 6-7. 5159267 https://doi.org/10.1109/VTSA.2009.5159267
Uchida, Ken ; Saitoh, Masumi. / Carrier transport and stress engineering in advanced nanoscale MOS transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2009. pp. 6-7
@inproceedings{f3e41451790344509d2c2c1c8d3ba0ef,
title = "Carrier transport and stress engineering in advanced nanoscale MOS transistors",
abstract = "This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Subband structure engineering to enhance mobility as well as ballistic current is also examined.",
author = "Ken Uchida and Masumi Saitoh",
year = "2009",
doi = "10.1109/VTSA.2009.5159267",
language = "English",
isbn = "9781424427857",
pages = "6--7",
booktitle = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

}

TY - GEN

T1 - Carrier transport and stress engineering in advanced nanoscale MOS transistors

AU - Uchida, Ken

AU - Saitoh, Masumi

PY - 2009

Y1 - 2009

N2 - This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Subband structure engineering to enhance mobility as well as ballistic current is also examined.

AB - This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Subband structure engineering to enhance mobility as well as ballistic current is also examined.

UR - http://www.scopus.com/inward/record.url?scp=77950110712&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950110712&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2009.5159267

DO - 10.1109/VTSA.2009.5159267

M3 - Conference contribution

SN - 9781424427857

SP - 6

EP - 7

BT - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

ER -