Carrier transport and stress engineering in advanced nanoscale MOS transistors

Ken Uchida; Masumi Saitoh

doi:10.1109/VTSA.2009.5159267

Carrier transport and stress engineering in advanced nanoscale MOS transistors

Ken Uchida, Masumi Saitoh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Subband structure engineering to enhance mobility as well as ballistic current is also examined.

Original language	English
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	6-7
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159267
Publication status	Published - 2009 Dec 1
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China Duration: 2009 Apr 27 → 2009 Apr 29

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	09/4/27 → 09/4/29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VTSA.2009.5159267

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Carrier transport and stress engineering in advanced nanoscale MOS transistors. / Uchida, Ken; Saitoh, Masumi.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 6-7 5159267 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uchida, K & Saitoh, M 2009, Carrier transport and stress engineering in advanced nanoscale MOS transistors. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159267, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 6-7, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, Province of China, 09/4/27. https://doi.org/10.1109/VTSA.2009.5159267

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title = "Carrier transport and stress engineering in advanced nanoscale MOS transistors",

abstract = "This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Subband structure engineering to enhance mobility as well as ballistic current is also examined.",

author = "Ken Uchida and Masumi Saitoh",

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BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

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ER -

Carrier transport and stress engineering in advanced nanoscale MOS transistors

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