Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond

Ken Uchida, Masumi Saitoh, Shigeki Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped junctions are investigated.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Uchida, K., Saitoh, M., & Kobayashi, S. (2008). Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796753] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796753