Abstract
Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped junctions are investigated.
| Original language | English |
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| Title of host publication | 2008 IEEE International Electron Devices Meeting, IEDM 2008 |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | 2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17 |
Publication series
| Name | Technical Digest - International Electron Devices Meeting, IEDM |
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| ISSN (Print) | 0163-1918 |
Other
| Other | 2008 IEEE International Electron Devices Meeting, IEDM 2008 |
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| Country | United States |
| City | San Francisco, CA |
| Period | 08/12/15 → 08/12/17 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Uchida, K., Saitoh, M., & Kobayashi, S. (2008). Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796753] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796753