Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond

Ken Uchida; Masumi Saitoh; Shigeki Kobayashi

doi:10.1109/IEDM.2008.4796753

Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond

Ken Uchida, Masumi Saitoh, Shigeki Kobayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Citations (Scopus)

Abstract

Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped junctions are investigated.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796753
Publication status	Published - 2008 Dec 1
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2008.4796753

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Uchida, K., Saitoh, M., & Kobayashi, S. (2008). Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796753] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796753

Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond. / Uchida, Ken; Saitoh, Masumi; Kobayashi, Shigeki.

2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796753 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uchida, K, Saitoh, M & Kobayashi, S 2008, Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796753, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796753

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Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond

Abstract

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ASJC Scopus subject areas

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