TY - GEN
T1 - Carrier transport and stress engineering in advanced nanoscale transistors from (100) and (110) Transistors to carbon nanotube FETs and beyond
AU - Uchida, Ken
AU - Saitoh, Masumi
AU - Kobayashi, Shigeki
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped junctions are investigated.
AB - Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped junctions are investigated.
UR - http://www.scopus.com/inward/record.url?scp=64549112539&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=64549112539&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2008.4796753
DO - 10.1109/IEDM.2008.4796753
M3 - Conference contribution
AN - SCOPUS:64549112539
SN - 9781424423781
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008
T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008
Y2 - 15 December 2008 through 17 December 2008
ER -