This paper presents a comprehensive study on carrier transport in ultrathin-body (UTB) SOI MOSFETs. Phonon, roughness, and Coulomb scatterings in UTB MOSFETs are discussed. The single-gate and double-gate operations of UTB MOSFETs are compared. In addition, stress engineering in UTB MOSFETs is experimentally investigated using bending apparatus. copyright The Electrochemical Society.
|Number of pages||6|
|Publication status||Published - 2006 Dec 1|
|Event||SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 2006 Oct 29 → 2006 Nov 3
ASJC Scopus subject areas