Carrier transport and stress engineering in ultrathin-body SOI MOSFETs

Ken Uchida

    Research output: Contribution to journalConference article

    Abstract

    This paper presents a comprehensive study on carrier transport in ultrathin-body (UTB) SOI MOSFETs. Phonon, roughness, and Coulomb scatterings in UTB MOSFETs are discussed. The single-gate and double-gate operations of UTB MOSFETs are compared. In addition, stress engineering in UTB MOSFETs is experimentally investigated using bending apparatus. copyright The Electrochemical Society.

    Original languageEnglish
    Pages (from-to)27-32
    Number of pages6
    JournalECS Transactions
    Volume3
    Issue number7
    DOIs
    Publication statusPublished - 2006 Dec 1
    EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
    Duration: 2006 Oct 292006 Nov 3

    ASJC Scopus subject areas

    • Engineering(all)

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