Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films

Xin Zhou, Ken Uchida, Hiroshi Mizuta, Shunri Oda

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The carrier transport at high voltage region in Si nanocrystal (SiNC) thin films has been investigated. The current-voltage measurements demonstrate that at high voltage region, conductance exponentially depends on V1/2. The activation energy, measured from the temperature dependence of the current-voltage (I-V) characteristics, decreases with an increase in the applied voltage. These results indicate that field enhanced detrapping dominates transport mechanism in the SiNC films at high voltage region. The possible influence of metal/semiconductor contacts on V1/2 dependence has been excluded through the activation energy measurement on different work-function metals as electrodes. The position of the traps contributing to the detrapping processes is concluded to be at interfaces of SiNC/SiO 2 since H2 annealing drastically decreases the activation energy. The reasons why experimental results demonstrate no accordance with the material parameter V* of Poole-Frenkel expression have been discussed based on nanostructure characteristics of SiNC film.

Original languageEnglish
Article number124518
JournalJournal of Applied Physics
Volume105
Issue number12
DOIs
Publication statusPublished - 2009
Externally publishedYes

Fingerprint

nanocrystals
high voltages
thin films
activation energy
nanostructure (characteristics)
electric potential
metals
electrical measurement
traps
temperature dependence
annealing
electrodes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films. / Zhou, Xin; Uchida, Ken; Mizuta, Hiroshi; Oda, Shunri.

In: Journal of Applied Physics, Vol. 105, No. 12, 124518, 2009.

Research output: Contribution to journalArticle

Zhou, Xin ; Uchida, Ken ; Mizuta, Hiroshi ; Oda, Shunri. / Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 12.
@article{a0b8abc441994ab5b3ac2bedc1c0c3db,
title = "Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films",
abstract = "The carrier transport at high voltage region in Si nanocrystal (SiNC) thin films has been investigated. The current-voltage measurements demonstrate that at high voltage region, conductance exponentially depends on V1/2. The activation energy, measured from the temperature dependence of the current-voltage (I-V) characteristics, decreases with an increase in the applied voltage. These results indicate that field enhanced detrapping dominates transport mechanism in the SiNC films at high voltage region. The possible influence of metal/semiconductor contacts on V1/2 dependence has been excluded through the activation energy measurement on different work-function metals as electrodes. The position of the traps contributing to the detrapping processes is concluded to be at interfaces of SiNC/SiO 2 since H2 annealing drastically decreases the activation energy. The reasons why experimental results demonstrate no accordance with the material parameter V* of Poole-Frenkel expression have been discussed based on nanostructure characteristics of SiNC film.",
author = "Xin Zhou and Ken Uchida and Hiroshi Mizuta and Shunri Oda",
year = "2009",
doi = "10.1063/1.3151688",
language = "English",
volume = "105",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films

AU - Zhou, Xin

AU - Uchida, Ken

AU - Mizuta, Hiroshi

AU - Oda, Shunri

PY - 2009

Y1 - 2009

N2 - The carrier transport at high voltage region in Si nanocrystal (SiNC) thin films has been investigated. The current-voltage measurements demonstrate that at high voltage region, conductance exponentially depends on V1/2. The activation energy, measured from the temperature dependence of the current-voltage (I-V) characteristics, decreases with an increase in the applied voltage. These results indicate that field enhanced detrapping dominates transport mechanism in the SiNC films at high voltage region. The possible influence of metal/semiconductor contacts on V1/2 dependence has been excluded through the activation energy measurement on different work-function metals as electrodes. The position of the traps contributing to the detrapping processes is concluded to be at interfaces of SiNC/SiO 2 since H2 annealing drastically decreases the activation energy. The reasons why experimental results demonstrate no accordance with the material parameter V* of Poole-Frenkel expression have been discussed based on nanostructure characteristics of SiNC film.

AB - The carrier transport at high voltage region in Si nanocrystal (SiNC) thin films has been investigated. The current-voltage measurements demonstrate that at high voltage region, conductance exponentially depends on V1/2. The activation energy, measured from the temperature dependence of the current-voltage (I-V) characteristics, decreases with an increase in the applied voltage. These results indicate that field enhanced detrapping dominates transport mechanism in the SiNC films at high voltage region. The possible influence of metal/semiconductor contacts on V1/2 dependence has been excluded through the activation energy measurement on different work-function metals as electrodes. The position of the traps contributing to the detrapping processes is concluded to be at interfaces of SiNC/SiO 2 since H2 annealing drastically decreases the activation energy. The reasons why experimental results demonstrate no accordance with the material parameter V* of Poole-Frenkel expression have been discussed based on nanostructure characteristics of SiNC film.

UR - http://www.scopus.com/inward/record.url?scp=67650242335&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650242335&partnerID=8YFLogxK

U2 - 10.1063/1.3151688

DO - 10.1063/1.3151688

M3 - Article

AN - SCOPUS:67650242335

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 124518

ER -