Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

Ken Uchida; Atsuhiro Kinoshita; Masumi Saitoh

doi:10.1109/IEDM.2006.346943

Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

Ken Uchida, Atsuhiro Kinoshita, Masumi Saitoh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346943
Publication status	Published - 2006 Dec 1
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 2006 Dec 10 → 2006 Dec 13

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	06/12/10 → 06/12/13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2006.346943

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Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. / Uchida, Ken; Kinoshita, Atsuhiro; Saitoh, Masumi.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154378 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uchida, K, Kinoshita, A & Saitoh, M 2006, Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154378, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346943

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Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

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ASJC Scopus subject areas

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