Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

Ken Uchida, Atsuhiro Kinoshita, Masumi Saitoh

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    36 Citations (Scopus)
    Original languageEnglish
    Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
    DOIs
    Publication statusPublished - 2006 Dec 1
    Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
    Duration: 2006 Dec 102006 Dec 13

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2006 International Electron Devices Meeting, IEDM
    CountryUnited States
    CitySan Francisco, CA
    Period06/12/1006/12/13

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

    Uchida, K., Kinoshita, A., & Saitoh, M. (2006). Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154378] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346943