Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

Ken Uchida, Atsuhiro Kinoshita, Masumi Saitoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

36 Citations (Scopus)
Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 2006 Dec 102006 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period06/12/1006/12/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Uchida, K., Kinoshita, A., & Saitoh, M. (2006). Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154378] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346943