Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

Ken Uchida, Atsuhiro Kinoshita, Masumi Saitoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

36 Citations (Scopus)
Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 2006 Dec 102006 Dec 13

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period06/12/1006/12/13

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Carrier transport

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Uchida, K., Kinoshita, A., & Saitoh, M. (2006). Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. In Technical Digest - International Electron Devices Meeting, IEDM [4154378] https://doi.org/10.1109/IEDM.2006.346943

Carrier transport in (110) nMOSFETs : Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. / Uchida, Ken; Kinoshita, Atsuhiro; Saitoh, Masumi.

Technical Digest - International Electron Devices Meeting, IEDM. 2006. 4154378.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, K, Kinoshita, A & Saitoh, M 2006, Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. in Technical Digest - International Electron Devices Meeting, IEDM., 4154378, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346943
Uchida K, Kinoshita A, Saitoh M. Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. In Technical Digest - International Electron Devices Meeting, IEDM. 2006. 4154378 https://doi.org/10.1109/IEDM.2006.346943
Uchida, Ken ; Kinoshita, Atsuhiro ; Saitoh, Masumi. / Carrier transport in (110) nMOSFETs : Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. Technical Digest - International Electron Devices Meeting, IEDM. 2006.
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