Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

Takashi Sekiguchi, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

InGaAs/GaAs quantum dot (QD) structures grown in tetrahedral-shaped recesses (TSR) etched into GaAs (111)B substrates are studied by means of cathodoluminescence (CL). Two main features are observed in the CL spectra. The lower energetic peak can be assigned to QDs in the bottom of the TSRs, while the higher energetic one corresponds to the quantum wells (QWs) formed at the sides of the TSRs. This can be confirmed by spatially resolved CL imaging. The behavior of QD and QW luminescence is studied by temperature and electron beam intensity dependence of CL. We will show that the formation of the QDs is strongly dependent on the size and the spacing of the TSRs.

Original languageEnglish
Pages (from-to)4944-4950
Number of pages7
JournalJournal of Applied Physics
Volume83
Issue number9
Publication statusPublished - 1998 May 1
Externally publishedYes

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recesses
cathodoluminescence
quantum dots
quantum wells
spacing
electron beams
luminescence
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates. / Sekiguchi, Takashi; Sakuma, Yoshiki; Awano, Yuji; Yokoyama, Naoki.

In: Journal of Applied Physics, Vol. 83, No. 9, 01.05.1998, p. 4944-4950.

Research output: Contribution to journalArticle

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