Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

Takashi Sekiguchi; Yoshiki Sakuma; Yuji Awano; Naoki Yokoyama

doi:10.1063/1.367295

Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

Takashi Sekiguchi, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

InGaAs/GaAs quantum dot (QD) structures grown in tetrahedral-shaped recesses (TSR) etched into GaAs (111)B substrates are studied by means of cathodoluminescence (CL). Two main features are observed in the CL spectra. The lower energetic peak can be assigned to QDs in the bottom of the TSRs, while the higher energetic one corresponds to the quantum wells (QWs) formed at the sides of the TSRs. This can be confirmed by spatially resolved CL imaging. The behavior of QD and QW luminescence is studied by temperature and electron beam intensity dependence of CL. We will show that the formation of the QDs is strongly dependent on the size and the spacing of the TSRs.

Original language	English
Pages (from-to)	4944-4950
Number of pages	7
Journal	Journal of Applied Physics
Volume	83
Issue number	9
DOIs	https://doi.org/10.1063/1.367295
Publication status	Published - 1998 May 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.367295

Cite this

@article{ef364507386149249002c8af55aa40c9,

title = "Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates",

abstract = "InGaAs/GaAs quantum dot (QD) structures grown in tetrahedral-shaped recesses (TSR) etched into GaAs (111)B substrates are studied by means of cathodoluminescence (CL). Two main features are observed in the CL spectra. The lower energetic peak can be assigned to QDs in the bottom of the TSRs, while the higher energetic one corresponds to the quantum wells (QWs) formed at the sides of the TSRs. This can be confirmed by spatially resolved CL imaging. The behavior of QD and QW luminescence is studied by temperature and electron beam intensity dependence of CL. We will show that the formation of the QDs is strongly dependent on the size and the spacing of the TSRs.",

author = "Takashi Sekiguchi and Yoshiki Sakuma and Yuji Awano and Naoki Yokoyama",

year = "1998",

month = may,

day = "1",

doi = "10.1063/1.367295",

language = "English",

volume = "83",

pages = "4944--4950",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

AU - Sekiguchi, Takashi

AU - Sakuma, Yoshiki

AU - Awano, Yuji

AU - Yokoyama, Naoki

PY - 1998/5/1

Y1 - 1998/5/1

N2 - InGaAs/GaAs quantum dot (QD) structures grown in tetrahedral-shaped recesses (TSR) etched into GaAs (111)B substrates are studied by means of cathodoluminescence (CL). Two main features are observed in the CL spectra. The lower energetic peak can be assigned to QDs in the bottom of the TSRs, while the higher energetic one corresponds to the quantum wells (QWs) formed at the sides of the TSRs. This can be confirmed by spatially resolved CL imaging. The behavior of QD and QW luminescence is studied by temperature and electron beam intensity dependence of CL. We will show that the formation of the QDs is strongly dependent on the size and the spacing of the TSRs.

AB - InGaAs/GaAs quantum dot (QD) structures grown in tetrahedral-shaped recesses (TSR) etched into GaAs (111)B substrates are studied by means of cathodoluminescence (CL). Two main features are observed in the CL spectra. The lower energetic peak can be assigned to QDs in the bottom of the TSRs, while the higher energetic one corresponds to the quantum wells (QWs) formed at the sides of the TSRs. This can be confirmed by spatially resolved CL imaging. The behavior of QD and QW luminescence is studied by temperature and electron beam intensity dependence of CL. We will show that the formation of the QDs is strongly dependent on the size and the spacing of the TSRs.

UR - http://www.scopus.com/inward/record.url?scp=0000966957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000966957&partnerID=8YFLogxK

U2 - 10.1063/1.367295

DO - 10.1063/1.367295

M3 - Article

AN - SCOPUS:0000966957

SN - 0021-8979

VL - 83

SP - 4944

EP - 4950

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this