Cathodoluminescence study of InGaAs/GaAs quantum dots formed on the tetrahedral-shaped recesses

Takashi Sekiguchi, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalArticle

Abstract

InGaAs/GaAs quantum dot structures grown on the tetrahedral-shaped-recesses (TSR) on the GaAs (111)B substrate were studied by means of cathodoluminescence (CL). The luminescence from quantum dots (QDs) and quantum wells (QWs) was resolved spatially by monochromatic CL images. TSRs of various sizes and spacing were observed. The optimum conditions of the QD fabrication are discussed.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalMolecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics
Volume18
Issue number2-4
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

recesses
Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Semiconductor quantum wells
Luminescence
spacing
quantum wells
luminescence
Fabrication
fabrication
Substrates
gallium arsenide

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Cathodoluminescence study of InGaAs/GaAs quantum dots formed on the tetrahedral-shaped recesses. / Sekiguchi, Takashi; Sakuma, Yoshiki; Awano, Yuji; Yokoyama, Naoki.

In: Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics, Vol. 18, No. 2-4, 1997, p. 311-314.

Research output: Contribution to journalArticle

@article{7f7e93db966b46ca885e556bcb1411d2,
title = "Cathodoluminescence study of InGaAs/GaAs quantum dots formed on the tetrahedral-shaped recesses",
abstract = "InGaAs/GaAs quantum dot structures grown on the tetrahedral-shaped-recesses (TSR) on the GaAs (111)B substrate were studied by means of cathodoluminescence (CL). The luminescence from quantum dots (QDs) and quantum wells (QWs) was resolved spatially by monochromatic CL images. TSRs of various sizes and spacing were observed. The optimum conditions of the QD fabrication are discussed.",
author = "Takashi Sekiguchi and Yoshiki Sakuma and Yuji Awano and Naoki Yokoyama",
year = "1997",
language = "English",
volume = "18",
pages = "311--314",
journal = "Nonlinear Optics Quantum Optics",
issn = "1543-0537",
publisher = "Old City Publishing",
number = "2-4",

}

TY - JOUR

T1 - Cathodoluminescence study of InGaAs/GaAs quantum dots formed on the tetrahedral-shaped recesses

AU - Sekiguchi, Takashi

AU - Sakuma, Yoshiki

AU - Awano, Yuji

AU - Yokoyama, Naoki

PY - 1997

Y1 - 1997

N2 - InGaAs/GaAs quantum dot structures grown on the tetrahedral-shaped-recesses (TSR) on the GaAs (111)B substrate were studied by means of cathodoluminescence (CL). The luminescence from quantum dots (QDs) and quantum wells (QWs) was resolved spatially by monochromatic CL images. TSRs of various sizes and spacing were observed. The optimum conditions of the QD fabrication are discussed.

AB - InGaAs/GaAs quantum dot structures grown on the tetrahedral-shaped-recesses (TSR) on the GaAs (111)B substrate were studied by means of cathodoluminescence (CL). The luminescence from quantum dots (QDs) and quantum wells (QWs) was resolved spatially by monochromatic CL images. TSRs of various sizes and spacing were observed. The optimum conditions of the QD fabrication are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0031376039&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031376039&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031376039

VL - 18

SP - 311

EP - 314

JO - Nonlinear Optics Quantum Optics

JF - Nonlinear Optics Quantum Optics

SN - 1543-0537

IS - 2-4

ER -