Abstract
InGaAs/GaAs quantum dot structures grown on the tetrahedral-shaped-recesses (TSR) on the GaAs (111)B substrate were studied by means of cathodoluminescence (CL). The luminescence from quantum dots (QDs) and quantum wells (QWs) was resolved spatially by monochromatic CL images. TSRs of various sizes and spacing were observed. The optimum conditions of the QD fabrication are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 311-314 |
| Number of pages | 4 |
| Journal | Molecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics |
| Volume | 18 |
| Issue number | 2-4 |
| Publication status | Published - 1997 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1997 International Symposium on Quantum Structures for Photonic Applications, QSPA'97 - Sendai, Jpn Duration: 1997 Mar 6 → 1997 Mar 8 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics