Cathodoluminescence study of InGaAs/GaAs quantum dots formed on the tetrahedral-shaped recesses

Takashi Sekiguchi, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalConference article

Abstract

InGaAs/GaAs quantum dot structures grown on the tetrahedral-shaped-recesses (TSR) on the GaAs (111)B substrate were studied by means of cathodoluminescence (CL). The luminescence from quantum dots (QDs) and quantum wells (QWs) was resolved spatially by monochromatic CL images. TSRs of various sizes and spacing were observed. The optimum conditions of the QD fabrication are discussed.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalMolecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics
Volume18
Issue number2-4
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 International Symposium on Quantum Structures for Photonic Applications, QSPA'97 - Sendai, Jpn
Duration: 1997 Mar 61997 Mar 8

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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