Cation sublattice stacking faults in Cu-rich chalcopyrite CuInSe2

Olof Hellman, Shigeru Niki, P. J. Fons

Research output: Contribution to journalArticle

Abstract

Using transmission electron microscopy, we investigate the microstructure of CuInSe2 films grown by molecular beam epitaxy on GaAs substrates under Cu-rich conditions. We find both a transition towards c-axis oriented growth as the film gets thicker, and a significant density of stacking faults on the cation sublattice in the chalcopyrite structure. These stacking faults are found to extend large distances in the plane of the film, and are not found to be present in samples not grown in Cu-rich conditions.

Original languageEnglish
Pages (from-to)X7-174
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume60
Issue number3
Publication statusPublished - 1996 Dec 1
Externally publishedYes

Keywords

  • CuInSe
  • Defects
  • Stacking Fault
  • Transmission Electron Microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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