Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates

E. Nagata, N. Takahashi, Hiroki Ishikuro, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

MOSFET memories with silicon nano-crystal floating gates have recently attracted much attention as future memory devices with low power consumption and high writing endurance. In order to obtain higher packing densities, the small dimension of memory devices is essential. It has been reported that the threshold voltage shift becomes larger as the channel width of MOSFET memory is narrower. However, it is easily speculated that as the channel width becomes narrower, the distribution of threshold voltage shift also becomes larger. In this paper, the width dependence of threshold voltage shift and its distribution is evaluated in narrow channel MOSFET memories with silicon nano-crystal floating gates. It is indicated that the precise control of silicon nano-crystal distribution is necessary for small memory devices.

Original languageEnglish
Title of host publication1999 International Microprocesses and Nanotechnology Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages86-87
Number of pages2
ISBN (Electronic)4930813972, 9784930813978
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes
Event1999 International Microprocesses and Nanotechnology Conference - Yokohama, Japan
Duration: 1999 Jul 61999 Jul 8

Other

Other1999 International Microprocesses and Nanotechnology Conference
CountryJapan
CityYokohama
Period99/7/699/7/8

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Nagata, E., Takahashi, N., Ishikuro, H., & Hiramoto, T. (1999). Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates. In 1999 International Microprocesses and Nanotechnology Conference (pp. 86-87). [797489] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.1999.797489