Characteristics of narrow channel MOSFET memory based on silicon nanocrystals

Yi Shi; Kenichi Saito; Hiroki Ishikuro; Toshiro Hiramoto

doi:10.1143/jjap.38.2453

Characteristics of narrow channel MOSFET memory based on silicon nanocrystals

Yi Shi, Kenichi Saito, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20-300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.

Original language	English
Pages (from-to)	2453-2456
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.38.2453
Publication status	Published - 1999
Externally published	Yes

Keywords

Floating gate
MOSFET memory
Silicon nanocrystal

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.38.2453

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abstract = "Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20-300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.",

keywords = "Floating gate, MOSFET memory, Silicon nanocrystal",

author = "Yi Shi and Kenichi Saito and Hiroki Ishikuro and Toshiro Hiramoto",

year = "1999",

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AU - Shi, Yi

AU - Saito, Kenichi

AU - Ishikuro, Hiroki

AU - Hiramoto, Toshiro

PY - 1999

Y1 - 1999

N2 - Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20-300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.

AB - Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20-300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.

KW - Floating gate

KW - MOSFET memory

KW - Silicon nanocrystal

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Characteristics of narrow channel MOSFET memory based on silicon nanocrystals

Abstract

Keywords

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