Characteristics of narrow channel MOSFET memory based on silicon nanocrystals

Yi Shi, Kenichi Saito, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20-300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.

Original languageEnglish
Pages (from-to)2453-2456
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Keywords

  • Floating gate
  • MOSFET memory
  • Silicon nanocrystal

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Characteristics of narrow channel MOSFET memory based on silicon nanocrystals'. Together they form a unique fingerprint.

  • Cite this