Characteristics of oriented LaNiO3 thin films fabricated by the sol-gel method

Shinichi Miyake, Shinobu Fujihara, Toshio Kimura

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

We fabricated LaNiO3 (LNO) thin films on SiO2 glass, (100) SrTiO3 (STO), (100) Si and CeO2-covered (100) Si substrates by the sol-gel method. The deposited films were heat-treated at 700°C with various conditions, duration and atmosphere. Preferentially (100)-oriented, polycrystalline LNO films were obtained on STO and Si. It was also found that orientated films could be formed even on SiO2 glass and CeO2-covered (100) Si substrates by altering the heating process. We investigated a relationship between the resistance and the crystallite size of the LNO films. The sheet resistance of LNO decreased with increasing crystallite size of LNO. The resistivity and sheet resistance of LNO/STO at 300 K were 340 μ Ω-cm and 33.8 Ω/, respectively, and those values of LNO/CeO2/Si at 300 K were 460 μΩ-cm and 28.8 Ω/.

Original languageEnglish
Pages (from-to)1525-1528
Number of pages4
JournalJournal of the European Ceramic Society
Volume21
Issue number10-11
DOIs
Publication statusPublished - 2001

Fingerprint

Sol-gel process
Thin films
Sheet resistance
Crystallite size
Glass
Industrial heating
Substrates
strontium titanium oxide

Keywords

  • CeO
  • Electrical conductivity
  • Films
  • Perovskites
  • Sol-gel processes

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Characteristics of oriented LaNiO3 thin films fabricated by the sol-gel method. / Miyake, Shinichi; Fujihara, Shinobu; Kimura, Toshio.

In: Journal of the European Ceramic Society, Vol. 21, No. 10-11, 2001, p. 1525-1528.

Research output: Contribution to journalArticle

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N2 - We fabricated LaNiO3 (LNO) thin films on SiO2 glass, (100) SrTiO3 (STO), (100) Si and CeO2-covered (100) Si substrates by the sol-gel method. The deposited films were heat-treated at 700°C with various conditions, duration and atmosphere. Preferentially (100)-oriented, polycrystalline LNO films were obtained on STO and Si. It was also found that orientated films could be formed even on SiO2 glass and CeO2-covered (100) Si substrates by altering the heating process. We investigated a relationship between the resistance and the crystallite size of the LNO films. The sheet resistance of LNO decreased with increasing crystallite size of LNO. The resistivity and sheet resistance of LNO/STO at 300 K were 340 μ Ω-cm and 33.8 Ω/, respectively, and those values of LNO/CeO2/Si at 300 K were 460 μΩ-cm and 28.8 Ω/.

AB - We fabricated LaNiO3 (LNO) thin films on SiO2 glass, (100) SrTiO3 (STO), (100) Si and CeO2-covered (100) Si substrates by the sol-gel method. The deposited films were heat-treated at 700°C with various conditions, duration and atmosphere. Preferentially (100)-oriented, polycrystalline LNO films were obtained on STO and Si. It was also found that orientated films could be formed even on SiO2 glass and CeO2-covered (100) Si substrates by altering the heating process. We investigated a relationship between the resistance and the crystallite size of the LNO films. The sheet resistance of LNO decreased with increasing crystallite size of LNO. The resistivity and sheet resistance of LNO/STO at 300 K were 340 μ Ω-cm and 33.8 Ω/, respectively, and those values of LNO/CeO2/Si at 300 K were 460 μΩ-cm and 28.8 Ω/.

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