Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces

Takeshi Kondo, Hiroyuki Ito, Kazuhide Kusakabe, Kazuhiro Ohkawa, Kensuke Honda, Yasuaki Einaga, Akira Fujishima, Takeshi Kawai

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The effect of CF4 plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10-20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)63-/4- was also found to be significantly modified after 10 s of CF4 plasma treatment. This behavior shows that C-F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (Cdl) of the electrolyte/CF4 plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF4 plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage.

Original languageEnglish
Pages (from-to)48-54
Number of pages7
JournalDiamond and Related Materials
Volume17
Issue number1
DOIs
Publication statusPublished - 2008 Jan

Fingerprint

Diamond
Boron
Electrochemical properties
Diamonds
boron
diamonds
Plasmas
Fluorine
Crystal defects
crystal defects
X ray photoelectron spectroscopy
fluorine
Scanning electron microscopy
Kinetics
photoelectron spectroscopy
Plasma etching
Defect density
scanning electron microscopy
Electrolytes
kinetics

Keywords

  • Diamond film
  • Electrochemical
  • Surface characterization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces. / Kondo, Takeshi; Ito, Hiroyuki; Kusakabe, Kazuhide; Ohkawa, Kazuhiro; Honda, Kensuke; Einaga, Yasuaki; Fujishima, Akira; Kawai, Takeshi.

In: Diamond and Related Materials, Vol. 17, No. 1, 01.2008, p. 48-54.

Research output: Contribution to journalArticle

Kondo, Takeshi ; Ito, Hiroyuki ; Kusakabe, Kazuhide ; Ohkawa, Kazuhiro ; Honda, Kensuke ; Einaga, Yasuaki ; Fujishima, Akira ; Kawai, Takeshi. / Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces. In: Diamond and Related Materials. 2008 ; Vol. 17, No. 1. pp. 48-54.
@article{93701abfc51548e58f0a39d266d00eb1,
title = "Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces",
abstract = "The effect of CF4 plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10-20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)63-/4- was also found to be significantly modified after 10 s of CF4 plasma treatment. This behavior shows that C-F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (Cdl) of the electrolyte/CF4 plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF4 plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage.",
keywords = "Diamond film, Electrochemical, Surface characterization",
author = "Takeshi Kondo and Hiroyuki Ito and Kazuhide Kusakabe and Kazuhiro Ohkawa and Kensuke Honda and Yasuaki Einaga and Akira Fujishima and Takeshi Kawai",
year = "2008",
month = "1",
doi = "10.1016/j.diamond.2007.10.009",
language = "English",
volume = "17",
pages = "48--54",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "1",

}

TY - JOUR

T1 - Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces

AU - Kondo, Takeshi

AU - Ito, Hiroyuki

AU - Kusakabe, Kazuhide

AU - Ohkawa, Kazuhiro

AU - Honda, Kensuke

AU - Einaga, Yasuaki

AU - Fujishima, Akira

AU - Kawai, Takeshi

PY - 2008/1

Y1 - 2008/1

N2 - The effect of CF4 plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10-20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)63-/4- was also found to be significantly modified after 10 s of CF4 plasma treatment. This behavior shows that C-F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (Cdl) of the electrolyte/CF4 plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF4 plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage.

AB - The effect of CF4 plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10-20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)63-/4- was also found to be significantly modified after 10 s of CF4 plasma treatment. This behavior shows that C-F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (Cdl) of the electrolyte/CF4 plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF4 plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage.

KW - Diamond film

KW - Electrochemical

KW - Surface characterization

UR - http://www.scopus.com/inward/record.url?scp=36749080891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749080891&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2007.10.009

DO - 10.1016/j.diamond.2007.10.009

M3 - Article

VL - 17

SP - 48

EP - 54

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 1

ER -