Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

S. Ichihara; T. Nakagawa; M. Nitta; S. Abo; T. Lohner; C. Angelov; K. Ohta; M. Takai

doi:10.1016/j.nimb.2004.01.124

Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

S. Ichihara, T. Nakagawa, M. Nitta, S. Abo, T. Lohner, C. Angelov, K. Ohta, M. Takai

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10^-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 10¹⁵ ions/cm² before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

Original language	English
Pages (from-to)	584-588
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	219-220
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2004.01.124
Publication status	Published - 2004 Jun
Externally published	Yes
Event	Proceedings of the Sixteenth International Conference on Ion - Albuquerque, NM., United States Duration: 2003 Jun 29 → 2003 Jul 4

Keywords

Depth resolution
MEIS
RBS
SIMS
Si
TEA

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nimb.2004.01.124

Cite this

Ichihara, S., Nakagawa, T., Nitta, M., Abo, S., Lohner, T., Angelov, C., Ohta, K., & Takai, M. (2004). Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 219-220(1-4), 584-588. https://doi.org/10.1016/j.nimb.2004.01.124

Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering. / Ichihara, S.; Nakagawa, T.; Nitta, M. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 219-220, No. 1-4, 06.2004, p. 584-588.

Research output: Contribution to journal › Conference article › peer-review

Ichihara, S, Nakagawa, T, Nitta, M, Abo, S, Lohner, T, Angelov, C, Ohta, K & Takai, M 2004, 'Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 219-220, no. 1-4, pp. 584-588. https://doi.org/10.1016/j.nimb.2004.01.124

Ichihara S, Nakagawa T, Nitta M, Abo S, Lohner T, Angelov C et al. Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2004 Jun;219-220(1-4):584-588. doi: 10.1016/j.nimb.2004.01.124

@article{4102647ae2ea460fa286a0d99087c75f,

title = "Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering",

abstract = "Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.",

keywords = "Depth resolution, MEIS, RBS, SIMS, Si, TEA",

author = "S. Ichihara and T. Nakagawa and M. Nitta and S. Abo and T. Lohner and C. Angelov and K. Ohta and M. Takai",

note = "Funding Information: This work was supported by the System of Joint Research with Industry in 1998–2002 (the Ministry of Education, Science, Sport and Culture and STARC). The authors would like to thank Dr. K. Kajiwara (SONY), Dr. T. Eimori (Mitsubishi) and Mr. T. Nishikawa (Oki) for their invaluable discussions.; Proceedings of the Sixteenth International Conference on Ion ; Conference date: 29-06-2003 Through 04-07-2003",

year = "2004",

month = jun,

doi = "10.1016/j.nimb.2004.01.124",

language = "English",

volume = "219-220",

pages = "584--588",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

AU - Ichihara, S.

AU - Nakagawa, T.

AU - Nitta, M.

AU - Abo, S.

AU - Lohner, T.

AU - Angelov, C.

AU - Ohta, K.

AU - Takai, M.

N1 - Funding Information: This work was supported by the System of Joint Research with Industry in 1998–2002 (the Ministry of Education, Science, Sport and Culture and STARC). The authors would like to thank Dr. K. Kajiwara (SONY), Dr. T. Eimori (Mitsubishi) and Mr. T. Nishikawa (Oki) for their invaluable discussions.

PY - 2004/6

Y1 - 2004/6

N2 - Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

AB - Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

KW - Depth resolution

KW - MEIS

KW - RBS

KW - SIMS

KW - Si

KW - TEA

UR - http://www.scopus.com/inward/record.url?scp=2342523331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342523331&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2004.01.124

DO - 10.1016/j.nimb.2004.01.124

M3 - Conference article

AN - SCOPUS:2342523331

SN - 0168-583X

VL - 219-220

SP - 584

EP - 588

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Proceedings of the Sixteenth International Conference on Ion

Y2 - 29 June 2003 through 4 July 2003

ER -

Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this