Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

S. Ichihara, T. Nakagawa, Muneto Nitta, S. Abo, T. Lohner, C. Angelov, K. Ohta, M. Takai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

Original languageEnglish
Pages (from-to)584-588
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume219-220
Issue number1-4
DOIs
Publication statusPublished - 2004 Jun
Externally publishedYes

Fingerprint

ion scattering
spikes
Ion implantation
implantation
Doping (additives)
Scattering
Annealing
Ions
annealing
Depth profiling
Secondary ion mass spectrometry
profiles
secondary ion mass spectrometry
energy
Arsenic
arsenic
Electrostatics
analyzers
electrostatics
dosage

Keywords

  • Depth resolution
  • MEIS
  • RBS
  • Si
  • SIMS
  • TEA

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering. / Ichihara, S.; Nakagawa, T.; Nitta, Muneto; Abo, S.; Lohner, T.; Angelov, C.; Ohta, K.; Takai, M.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 219-220, No. 1-4, 06.2004, p. 584-588.

Research output: Contribution to journalArticle

@article{4102647ae2ea460fa286a0d99087c75f,
title = "Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering",
abstract = "Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.",
keywords = "Depth resolution, MEIS, RBS, Si, SIMS, TEA",
author = "S. Ichihara and T. Nakagawa and Muneto Nitta and S. Abo and T. Lohner and C. Angelov and K. Ohta and M. Takai",
year = "2004",
month = "6",
doi = "10.1016/j.nimb.2004.01.124",
language = "English",
volume = "219-220",
pages = "584--588",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Characterization of dopant profiles produced by ultra-shallow As implantation and spike annealing using medium energy ion scattering

AU - Ichihara, S.

AU - Nakagawa, T.

AU - Nitta, Muneto

AU - Abo, S.

AU - Lohner, T.

AU - Angelov, C.

AU - Ohta, K.

AU - Takai, M.

PY - 2004/6

Y1 - 2004/6

N2 - Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

AB - Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4 × 10-3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 1015 ions/cm2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

KW - Depth resolution

KW - MEIS

KW - RBS

KW - Si

KW - SIMS

KW - TEA

UR - http://www.scopus.com/inward/record.url?scp=2342523331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342523331&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2004.01.124

DO - 10.1016/j.nimb.2004.01.124

M3 - Article

VL - 219-220

SP - 584

EP - 588

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -