Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters

Takaho Yokoyama; Naoyuki Hirata; Hironori Tsunoyama; Yuichi Negishi; Atsushi Nakajima

doi:10.1063/1.5025509

Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters

Takaho Yokoyama, Naoyuki Hirata, Hironori Tsunoyama, Yuichi Negishi, Atsushi Nakajima

Department of Chemistry

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au₂₅(SR)₁₈, Au₂₄Pd(SR)₁₈, and Au₃₈(SR)₂₄ (R = C₁₂H₂₅), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.

Original language	English
Article number	065002
Journal	AIP Advances
Volume	8
Issue number	6
DOIs	https://doi.org/10.1063/1.5025509
Publication status	Published - 2018 Jun 1

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Yokoyama, T., Hirata, N., Tsunoyama, H., Negishi, Y., & Nakajima, A. (2018). Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters. AIP Advances, 8(6), [065002]. https://doi.org/10.1063/1.5025509

@article{668fc64186e9412b87526d9b804faecf,

title = "Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters",

abstract = "The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.",

author = "Takaho Yokoyama and Naoyuki Hirata and Hironori Tsunoyama and Yuichi Negishi and Atsushi Nakajima",

year = "2018",

month = jun,

day = "1",

doi = "10.1063/1.5025509",

language = "English",

volume = "8",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters

AU - Yokoyama, Takaho

AU - Hirata, Naoyuki

AU - Tsunoyama, Hironori

AU - Negishi, Yuichi

AU - Nakajima, Atsushi

PY - 2018/6/1

Y1 - 2018/6/1

N2 - The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.

AB - The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.

UR - http://www.scopus.com/inward/record.url?scp=85048030544&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048030544&partnerID=8YFLogxK

U2 - 10.1063/1.5025509

DO - 10.1063/1.5025509

M3 - Article

AN - SCOPUS:85048030544

VL - 8

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 6

M1 - 065002

ER -

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10.1063/1.5025509