Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters

Takaho Yokoyama; Naoyuki Hirata; Hironori Tsunoyama; Yuichi Negishi; Atsushi Nakajima

doi:10.1063/1.5025509

Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters

Takaho Yokoyama, Naoyuki Hirata, Hironori Tsunoyama, Yuichi Negishi, Atsushi Nakajima

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au₂₅(SR)₁₈, Au₂₄Pd(SR)₁₈, and Au₃₈(SR)₂₄ (R = C₁₂H₂₅), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.

Original language	English
Article number	065002
Journal	AIP Advances
Volume	8
Issue number	6
DOIs	https://doi.org/10.1063/1.5025509
Publication status	Published - 2018 Jun 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters",

abstract = "The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.",

author = "Takaho Yokoyama and Naoyuki Hirata and Hironori Tsunoyama and Yuichi Negishi and Atsushi Nakajima",

note = "Funding Information: We would like to express our gratitude to Prof. K. Noda (Keio University) for valuable discussion on the floating memory. This work is partly supported by JSPS KAKENHI of Grant-in-Aids for Scientific Research (A) grant no. 15H02002 and for Challenging Research (Pioneering) grant no. 17H06226.",

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AU - Negishi, Yuichi

AU - Nakajima, Atsushi

N1 - Funding Information: We would like to express our gratitude to Prof. K. Noda (Keio University) for valuable discussion on the floating memory. This work is partly supported by JSPS KAKENHI of Grant-in-Aids for Scientific Research (A) grant no. 15H02002 and for Challenging Research (Pioneering) grant no. 17H06226.

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N2 - The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.

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Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters

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