Abstract
The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.
| Original language | English |
|---|---|
| Article number | 065002 |
| Journal | AIP Advances |
| Volume | 8 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2018 Jun 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters. / Yokoyama, Takaho; Hirata, Naoyuki; Tsunoyama, Hironori; Negishi, Yuichi; Nakajima, Atsushi.
In: AIP Advances, Vol. 8, No. 6, 065002, 01.06.2018.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Characterization of floating-gate memory device with thiolate-protected gold and gold-palladium nanoclusters
AU - Yokoyama, Takaho
AU - Hirata, Naoyuki
AU - Tsunoyama, Hironori
AU - Negishi, Yuichi
AU - Nakajima, Atsushi
PY - 2018/6/1
Y1 - 2018/6/1
N2 - The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.
AB - The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C-V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure - area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C-V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices.
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U2 - 10.1063/1.5025509
DO - 10.1063/1.5025509
M3 - Article
AN - SCOPUS:85048030544
VL - 8
JO - AIP Advances
JF - AIP Advances
SN - 2158-3226
IS - 6
M1 - 065002
ER -