Characterization of metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O3 and Y2O3 films

Eisuke Tokumitsu, Daisuke Takahashi, Hiroshi Ishiwara

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures are fabricated and characterized using (Pb,La)(Zr0.3Ti0.7)O3 (PLZT) and Y2O3 films. Y2O3 buffer layers are epitaxially grown on Si(111) substrates by molecular beam epitaxy and ferroelectric PLZT films are formed on (Pt/)Y2O3/Si by the sol-gel technique. It was found that the Al/Y2O3/Si MIS structure has a low leakage current of less than 10-8 A/cm2. The capacitance-voltage (C-V) characteristics of the PLZT/Y2O3/Si MFIS structure exhibit a hysteresis loop due to the ferroelectricity of the PLZT film with a memory window of 1 V. On the other hand, the memory window of the Pt/PLZT/Pt/Y2O3/Si MFMIS structures is significantly improved.

Original languageEnglish
Pages (from-to)5456-5459
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number9 B
DOIs
Publication statusPublished - 2000 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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