Characterization of metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O3 and Y2O3 films

Eisuke Tokumitsu; Daisuke Takahashi; Hiroshi Ishiwara

doi:10.1143/jjap.39.5456

Characterization of metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O₃ and Y₂O₃ films

Eisuke Tokumitsu, Daisuke Takahashi, Hiroshi Ishiwara

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures are fabricated and characterized using (Pb,La)(Zr_0.3Ti_0.7)O₃ (PLZT) and Y₂O₃ films. Y₂O₃ buffer layers are epitaxially grown on Si(111) substrates by molecular beam epitaxy and ferroelectric PLZT films are formed on (Pt/)Y₂O₃/Si by the sol-gel technique. It was found that the Al/Y₂O₃/Si MIS structure has a low leakage current of less than 10^-8 A/cm². The capacitance-voltage (C-V) characteristics of the PLZT/Y₂O₃/Si MFIS structure exhibit a hysteresis loop due to the ferroelectricity of the PLZT film with a memory window of 1 V. On the other hand, the memory window of the Pt/PLZT/Pt/Y₂O₃/Si MFMIS structures is significantly improved.

Original language	English
Pages (from-to)	5456-5459
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	9 B
DOIs	https://doi.org/10.1143/jjap.39.5456
Publication status	Published - 2000 Sep
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Characterization of metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O₃ and Y₂O₃ films. / Tokumitsu, Eisuke; Takahashi, Daisuke; Ishiwara, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 9 B, 09.2000, p. 5456-5459.

Research output: Contribution to journal › Article › peer-review

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title = "Characterization of metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O3 and Y2O3 films",

abstract = "Metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures are fabricated and characterized using (Pb,La)(Zr0.3Ti0.7)O3 (PLZT) and Y2O3 films. Y2O3 buffer layers are epitaxially grown on Si(111) substrates by molecular beam epitaxy and ferroelectric PLZT films are formed on (Pt/)Y2O3/Si by the sol-gel technique. It was found that the Al/Y2O3/Si MIS structure has a low leakage current of less than 10-8 A/cm2. The capacitance-voltage (C-V) characteristics of the PLZT/Y2O3/Si MFIS structure exhibit a hysteresis loop due to the ferroelectricity of the PLZT film with a memory window of 1 V. On the other hand, the memory window of the Pt/PLZT/Pt/Y2O3/Si MFMIS structures is significantly improved.",

author = "Eisuke Tokumitsu and Daisuke Takahashi and Hiroshi Ishiwara",

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AU - Ishiwara, Hiroshi

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N2 - Metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures are fabricated and characterized using (Pb,La)(Zr0.3Ti0.7)O3 (PLZT) and Y2O3 films. Y2O3 buffer layers are epitaxially grown on Si(111) substrates by molecular beam epitaxy and ferroelectric PLZT films are formed on (Pt/)Y2O3/Si by the sol-gel technique. It was found that the Al/Y2O3/Si MIS structure has a low leakage current of less than 10-8 A/cm2. The capacitance-voltage (C-V) characteristics of the PLZT/Y2O3/Si MFIS structure exhibit a hysteresis loop due to the ferroelectricity of the PLZT film with a memory window of 1 V. On the other hand, the memory window of the Pt/PLZT/Pt/Y2O3/Si MFMIS structures is significantly improved.

AB - Metal-ferroelectric-(metal-)insulator-semiconductor (MF(M)IS) structures are fabricated and characterized using (Pb,La)(Zr0.3Ti0.7)O3 (PLZT) and Y2O3 films. Y2O3 buffer layers are epitaxially grown on Si(111) substrates by molecular beam epitaxy and ferroelectric PLZT films are formed on (Pt/)Y2O3/Si by the sol-gel technique. It was found that the Al/Y2O3/Si MIS structure has a low leakage current of less than 10-8 A/cm2. The capacitance-voltage (C-V) characteristics of the PLZT/Y2O3/Si MFIS structure exhibit a hysteresis loop due to the ferroelectricity of the PLZT film with a memory window of 1 V. On the other hand, the memory window of the Pt/PLZT/Pt/Y2O3/Si MFMIS structures is significantly improved.

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