Characterization of oxygen impurities in thermally evaporated LaF 3 thin films suitable for oxygen sensor

M. Vijayakumar, S. Selvasekarapandian, T. Gnanasekaran, Shinobu Fujihara, Shinnosuke Koji

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.

Original languageEnglish
Pages (from-to)125-130
Number of pages6
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Jan 30


  • LaF
  • Oxygen sensor
  • XPS analysis
  • XRD analysis

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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