Characterization of oxygen impurities in thermally evaporated LaF 3 thin films suitable for oxygen sensor

M. Vijayakumar, S. Selvasekarapandian, T. Gnanasekaran, Shinobu Fujihara, Shinnosuke Koji

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF3. The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF3 film applied for the oxygen sensor.

Original languageEnglish
Pages (from-to)125-130
Number of pages6
JournalApplied Surface Science
Volume222
Issue number1-4
DOIs
Publication statusPublished - 2004 Jan 30

Fingerprint

Oxygen sensors
Lanthanum
lanthanum fluorides
Impurities
Oxygen
oxyfluorides
Thin films
impurities
Thermal evaporation
sensors
oxygen
thin films
lanthanum
X ray photoelectron spectroscopy
evaporation
photoelectron spectroscopy
Oxides
oxides
Ions
profiles

Keywords

  • LaF
  • Oxygen sensor
  • XPS analysis
  • XRD analysis

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Characterization of oxygen impurities in thermally evaporated LaF 3 thin films suitable for oxygen sensor. / Vijayakumar, M.; Selvasekarapandian, S.; Gnanasekaran, T.; Fujihara, Shinobu; Koji, Shinnosuke.

In: Applied Surface Science, Vol. 222, No. 1-4, 30.01.2004, p. 125-130.

Research output: Contribution to journalArticle

Vijayakumar, M. ; Selvasekarapandian, S. ; Gnanasekaran, T. ; Fujihara, Shinobu ; Koji, Shinnosuke. / Characterization of oxygen impurities in thermally evaporated LaF 3 thin films suitable for oxygen sensor. In: Applied Surface Science. 2004 ; Vol. 222, No. 1-4. pp. 125-130.
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