Characterization of oxygen impurities in thermally evaporated LaF 3 thin films suitable for oxygen sensor

M. Vijayakumar, S. Selvasekarapandian, T. Gnanasekaran, Shinobu Fujihara, Shinnosuke Koji

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.

Original languageEnglish
Pages (from-to)125-130
Number of pages6
JournalApplied Surface Science
Volume222
Issue number1-4
DOIs
Publication statusPublished - 2004 Jan 30

Keywords

  • LaF
  • Oxygen sensor
  • XPS analysis
  • XRD analysis

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Characterization of oxygen impurities in thermally evaporated LaF <sub>3</sub> thin films suitable for oxygen sensor'. Together they form a unique fingerprint.

Cite this