Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates

T. Hiramoto, Hiroki Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Ikoma

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Silicon quantum wire structures with precisely controlled widths have been successfully fabricated on an SOI substrate by an anisotropic etching technique. The width of the wires does not depend on the lithography limit but solely on the thickness of the Si film of the SOI substrate. It is demonstrated that the wires are straight even if the lithography patterns are fluctuated. The minimum width is estimated to be less than 10 nm. This technique has been applied to fabricating a quantum wire FET, which shows fine peaks in drain current as a function of the gate voltage at low temperatures due to the Coulomb blockade of the single electron tunneling. The oscillations remain even at room temperature.

Original languageEnglish
Pages (from-to)95-97
Number of pages3
JournalPhysica B: Condensed Matter
Volume227
Issue number1-4
Publication statusPublished - 1996 Sep
Externally publishedYes

Fingerprint

Semiconductor quantum wires
SOI (semiconductors)
quantum wires
Lithography
Wire
Coulomb blockade
Anisotropic etching
Electron tunneling
Drain current
Silicon
Substrates
lithography
Field effect transistors
wire
electron tunneling
Temperature
Electric potential
field effect transistors
etching
oscillations

Keywords

  • Coulomb blockade
  • Quantum dots
  • Si quantum wire
  • SOI

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Hiramoto, T., Ishikuro, H., Fujii, T., Saraya, T., Hashiguchi, G., & Ikoma, T. (1996). Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates. Physica B: Condensed Matter, 227(1-4), 95-97.

Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates. / Hiramoto, T.; Ishikuro, Hiroki; Fujii, T.; Saraya, T.; Hashiguchi, G.; Ikoma, T.

In: Physica B: Condensed Matter, Vol. 227, No. 1-4, 09.1996, p. 95-97.

Research output: Contribution to journalArticle

Hiramoto, T, Ishikuro, H, Fujii, T, Saraya, T, Hashiguchi, G & Ikoma, T 1996, 'Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates', Physica B: Condensed Matter, vol. 227, no. 1-4, pp. 95-97.
Hiramoto, T. ; Ishikuro, Hiroki ; Fujii, T. ; Saraya, T. ; Hashiguchi, G. ; Ikoma, T. / Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates. In: Physica B: Condensed Matter. 1996 ; Vol. 227, No. 1-4. pp. 95-97.
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