Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates

Engineering & Materials Science

• Semiconductor quantum wires 100%
• Lithography 54%
• Coulomb blockade 45%
• Electron tunneling 38%
• Anisotropic etching 38%
• Substrates 35%
• Drain current 31%
• Field effect transistors 26%
• Temperature 19%
• Silicon 19%
• Electric potential 12%

Physics & Astronomy

• quantum wires 55%
• SOI (semiconductors) 54%
• lithography 27%
• characterization 27%
• wire 24%
• electron tunneling 18%
• field effect transistors 13%
• etching 12%
• oscillations 10%
• room temperature 9%
• electric potential 8%
• silicon 8%

Chemical Compounds

• Coulomb Blockade 41%
• Drain Current 38%
• Tunneling 25%
• Etching 22%
• Voltage 18%
• Ambient Reaction Temperature 13%
• Electron Particle 13%
• Liquid Film 12%