Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

Miki Naganawa, Yasuo Shimizu, Masashi Uematsu, Kohei M Itoh, Kentarou Sawano, Yasuhiro Shiraki, Eugene E. Haller

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Abstract

Diffusion of germanium (Ge) and arsenic (As) has been investigated simultaneously using As-implanted Ge isotope superlattices. No transient enhanced diffusion of As that could have arisen by the implantation damage is observed. A quadratic dependence of the Ge self-diffusion on the carrier concentration due to the Fermi level effect is observed. A precise reproduction of the Ge and As diffusion profiles by a numerical simulator lets us conclude that doubly negatively charged vacancies are the dominant point defects responsible for more than 95% of the self-diffusion in intrinsic Ge and this fraction increases even further in n -type Ge.

Original languageEnglish
Article number191905
JournalApplied Physics Letters
Volume93
Issue number19
DOIs
Publication statusPublished - 2008

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arsenic
germanium
germanium isotopes
point defects
simulators
superlattices
implantation
damage
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion. / Naganawa, Miki; Shimizu, Yasuo; Uematsu, Masashi; Itoh, Kohei M; Sawano, Kentarou; Shiraki, Yasuhiro; Haller, Eugene E.

In: Applied Physics Letters, Vol. 93, No. 19, 191905, 2008.

Research output: Contribution to journalArticle

Naganawa, Miki ; Shimizu, Yasuo ; Uematsu, Masashi ; Itoh, Kohei M ; Sawano, Kentarou ; Shiraki, Yasuhiro ; Haller, Eugene E. / Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion. In: Applied Physics Letters. 2008 ; Vol. 93, No. 19.
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