Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

Miki Naganawa, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, Eugene E. Haller

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55 Citations (Scopus)

Abstract

Diffusion of germanium (Ge) and arsenic (As) has been investigated simultaneously using As-implanted Ge isotope superlattices. No transient enhanced diffusion of As that could have arisen by the implantation damage is observed. A quadratic dependence of the Ge self-diffusion on the carrier concentration due to the Fermi level effect is observed. A precise reproduction of the Ge and As diffusion profiles by a numerical simulator lets us conclude that doubly negatively charged vacancies are the dominant point defects responsible for more than 95% of the self-diffusion in intrinsic Ge and this fraction increases even further in n -type Ge.

Original languageEnglish
Article number191905
JournalApplied Physics Letters
Volume93
Issue number19
DOIs
Publication statusPublished - 2008 Nov 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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