Chip morphology of ultra-precision diamond turning of single crystal silicon

Jiwang Yan, Katsuo Syoji, Tsunemoto Kuriyagawa

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Material removal behavior of single crystal silicon in ultra-precision diamond turning is experimentally studied. Microscopic chip morphology is investigated to clarify the brittle-ductile transition mechanism. A straight-nosed diamond tool is used to obtain the uniform chip thickness along the cutting edge. Three dominant types of chips are observed under different undeformed chip thickness. In the brittle regime, irregular grain chips and pitted surface are formed by cleavage fracture. As an intermediate regime, periodical shear deformation occurs with producing line chips and striated surface. The chip formation phenomenon in the ductile regime is confirmed to be similar to that of metal cutting, where continuous ribbon chips and perfectly transcribed surface can be obtained. Moreover, the crystallographic anisotropy effects in the chip morphology are found.

Original languageEnglish
Pages (from-to)1008-1012
Number of pages5
JournalSeimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
Volume65
Issue number7
Publication statusPublished - 1999
Externally publishedYes

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Diamonds
Single crystals
Silicon
Metal cutting
Shear deformation
Anisotropy

Keywords

  • Brittle-ductile transition
  • Chip morphology
  • Crystallographic anisotropy
  • Ductile regime machining
  • Single crystal silicon
  • Surface texture
  • Ultra-precision diamond turning

ASJC Scopus subject areas

  • Mechanical Engineering

Cite this

Chip morphology of ultra-precision diamond turning of single crystal silicon. / Yan, Jiwang; Syoji, Katsuo; Kuriyagawa, Tsunemoto.

In: Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering, Vol. 65, No. 7, 1999, p. 1008-1012.

Research output: Contribution to journalArticle

@article{647731542fef4c2d832f298d56864c04,
title = "Chip morphology of ultra-precision diamond turning of single crystal silicon",
abstract = "Material removal behavior of single crystal silicon in ultra-precision diamond turning is experimentally studied. Microscopic chip morphology is investigated to clarify the brittle-ductile transition mechanism. A straight-nosed diamond tool is used to obtain the uniform chip thickness along the cutting edge. Three dominant types of chips are observed under different undeformed chip thickness. In the brittle regime, irregular grain chips and pitted surface are formed by cleavage fracture. As an intermediate regime, periodical shear deformation occurs with producing line chips and striated surface. The chip formation phenomenon in the ductile regime is confirmed to be similar to that of metal cutting, where continuous ribbon chips and perfectly transcribed surface can be obtained. Moreover, the crystallographic anisotropy effects in the chip morphology are found.",
keywords = "Brittle-ductile transition, Chip morphology, Crystallographic anisotropy, Ductile regime machining, Single crystal silicon, Surface texture, Ultra-precision diamond turning",
author = "Jiwang Yan and Katsuo Syoji and Tsunemoto Kuriyagawa",
year = "1999",
language = "English",
volume = "65",
pages = "1008--1012",
journal = "Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering",
issn = "0912-0289",
publisher = "Japan Society for Precision Engineering",
number = "7",

}

TY - JOUR

T1 - Chip morphology of ultra-precision diamond turning of single crystal silicon

AU - Yan, Jiwang

AU - Syoji, Katsuo

AU - Kuriyagawa, Tsunemoto

PY - 1999

Y1 - 1999

N2 - Material removal behavior of single crystal silicon in ultra-precision diamond turning is experimentally studied. Microscopic chip morphology is investigated to clarify the brittle-ductile transition mechanism. A straight-nosed diamond tool is used to obtain the uniform chip thickness along the cutting edge. Three dominant types of chips are observed under different undeformed chip thickness. In the brittle regime, irregular grain chips and pitted surface are formed by cleavage fracture. As an intermediate regime, periodical shear deformation occurs with producing line chips and striated surface. The chip formation phenomenon in the ductile regime is confirmed to be similar to that of metal cutting, where continuous ribbon chips and perfectly transcribed surface can be obtained. Moreover, the crystallographic anisotropy effects in the chip morphology are found.

AB - Material removal behavior of single crystal silicon in ultra-precision diamond turning is experimentally studied. Microscopic chip morphology is investigated to clarify the brittle-ductile transition mechanism. A straight-nosed diamond tool is used to obtain the uniform chip thickness along the cutting edge. Three dominant types of chips are observed under different undeformed chip thickness. In the brittle regime, irregular grain chips and pitted surface are formed by cleavage fracture. As an intermediate regime, periodical shear deformation occurs with producing line chips and striated surface. The chip formation phenomenon in the ductile regime is confirmed to be similar to that of metal cutting, where continuous ribbon chips and perfectly transcribed surface can be obtained. Moreover, the crystallographic anisotropy effects in the chip morphology are found.

KW - Brittle-ductile transition

KW - Chip morphology

KW - Crystallographic anisotropy

KW - Ductile regime machining

KW - Single crystal silicon

KW - Surface texture

KW - Ultra-precision diamond turning

UR - http://www.scopus.com/inward/record.url?scp=0042536524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042536524&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0042536524

VL - 65

SP - 1008

EP - 1012

JO - Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering

JF - Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering

SN - 0912-0289

IS - 7

ER -