Circuit and device interactions for 3D integration using inductive coupling

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a ThruChip Interface using inductive coupling and Highly Doped Silicon Via for power delivery. Design automation, manufacturability, applications, and scaling scenario are discussed.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages18.6.1-18.6.4
Volume2015-February
EditionFebruary
DOIs
Publication statusPublished - 2015 Feb 20
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 2014 Dec 152014 Dec 17

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period14/12/1514/12/17

Fingerprint

Silicon
automation
delivery
Automation
scaling
Networks (circuits)
silicon
interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kuroda, T. (2015). Circuit and device interactions for 3D integration using inductive coupling. In Technical Digest - International Electron Devices Meeting, IEDM (February ed., Vol. 2015-February, pp. 18.6.1-18.6.4). [7047079] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047079

Circuit and device interactions for 3D integration using inductive coupling. / Kuroda, Tadahiro.

Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 18.6.1-18.6.4 7047079.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuroda, T 2015, Circuit and device interactions for 3D integration using inductive coupling. in Technical Digest - International Electron Devices Meeting, IEDM. February edn, vol. 2015-February, 7047079, Institute of Electrical and Electronics Engineers Inc., pp. 18.6.1-18.6.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7047079
Kuroda T. Circuit and device interactions for 3D integration using inductive coupling. In Technical Digest - International Electron Devices Meeting, IEDM. February ed. Vol. 2015-February. Institute of Electrical and Electronics Engineers Inc. 2015. p. 18.6.1-18.6.4. 7047079 https://doi.org/10.1109/IEDM.2014.7047079
Kuroda, Tadahiro. / Circuit and device interactions for 3D integration using inductive coupling. Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 18.6.1-18.6.4
@inproceedings{5727d171627a4e6d8dd196c00bc00d09,
title = "Circuit and device interactions for 3D integration using inductive coupling",
abstract = "This paper presents a ThruChip Interface using inductive coupling and Highly Doped Silicon Via for power delivery. Design automation, manufacturability, applications, and scaling scenario are discussed.",
author = "Tadahiro Kuroda",
year = "2015",
month = "2",
day = "20",
doi = "10.1109/IEDM.2014.7047079",
language = "English",
volume = "2015-February",
pages = "18.6.1--18.6.4",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
edition = "February",

}

TY - GEN

T1 - Circuit and device interactions for 3D integration using inductive coupling

AU - Kuroda, Tadahiro

PY - 2015/2/20

Y1 - 2015/2/20

N2 - This paper presents a ThruChip Interface using inductive coupling and Highly Doped Silicon Via for power delivery. Design automation, manufacturability, applications, and scaling scenario are discussed.

AB - This paper presents a ThruChip Interface using inductive coupling and Highly Doped Silicon Via for power delivery. Design automation, manufacturability, applications, and scaling scenario are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84938280683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938280683&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2014.7047079

DO - 10.1109/IEDM.2014.7047079

M3 - Conference contribution

AN - SCOPUS:84938280683

VL - 2015-February

SP - 18.6.1-18.6.4

BT - Technical Digest - International Electron Devices Meeting, IEDM

PB - Institute of Electrical and Electronics Engineers Inc.

ER -