Clear correspondence between magnetoresistance and magnetization of epitaxially grown ordered FeRh thin films

Ippei Suzuki, Tomoyuki Naito, Mitsuru Itoh, Tetsuya Sato, Tomoyasu Taniyama

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Magnetoresistance and magnetization of the CsCl-type ordered FeRh epitaxial thin films grown on MgO(001) substrates are investigated as a function of temperature and film thickness. All the films show a clear first-order magnetic phase transition from the antiferromagnetic state to the ferromagnetic state at around 380 K. A large negative variation in the field-dependent magnetoresistance of the FeRh thin films, which is accompanied by the field-induced magnetic phase transition, is found to be well scaled with the magnetization squared M2. The results indicate that the magnetoresistance primarily arises from spin-dependent scattering through the s-d exchange interactions between conduction electrons and the localized magnetic moments.

Original languageEnglish
Article number07C717
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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