Cluster simulation of correlation effect in hole-doped high-temperature superconductor

Mikio Eto, Riichiro Saito, Hiroshi Kamimura

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Electronic states of LaCuO system are calculated from the first principles, using the MCSCF-CI method and by taking CuO6 and Cu2O11 clusters as a model. For CuO6 it is shown that the electronic states are very sensitive to the distance between the apical oxygen and copper atoms, which becomes shorter with doping divalent ions. For Cu2O11 it is shown in the undoped case that two electrons are localized in copper dx2-y2 orbitals and make anti-ferromagnetic coupling with exchange integral J of 1600 K. When a hole is doped, we show that a doped hole spends 39 % of time at copper sites while 61 % at oxygen sites. This is due to the energy gain arising from direct anti-ferromagnetic exchange between Cu and O unpaired spins which results in ferromagnetic spin-coupling between Cu spins.

Original languageEnglish
Pages (from-to)425-429
Number of pages5
JournalSolid State Communications
Volume71
Issue number5
DOIs
Publication statusPublished - 1989
Externally publishedYes

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High temperature superconductors
high temperature superconductors
Copper
Electronic states
copper
Oxygen
simulation
electronics
oxygen atoms
Doping (additives)
Ions
orbitals
Atoms
Electrons
oxygen
atoms
ions
electrons
energy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Cluster simulation of correlation effect in hole-doped high-temperature superconductor. / Eto, Mikio; Saito, Riichiro; Kamimura, Hiroshi.

In: Solid State Communications, Vol. 71, No. 5, 1989, p. 425-429.

Research output: Contribution to journalArticle

Eto, Mikio ; Saito, Riichiro ; Kamimura, Hiroshi. / Cluster simulation of correlation effect in hole-doped high-temperature superconductor. In: Solid State Communications. 1989 ; Vol. 71, No. 5. pp. 425-429.
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