CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform

Yuta Ooka, Tomohiro Tetsumoto, Akihiro Fushimi, Wataru Yoshiki, Takasumi Tanabe

    Research output: Contribution to journalArticle

    40 Citations (Scopus)

    Abstract

    Progress on the fabrication of ultrahigh-Q photonic-crystal nanocavities (PhC-NCs) has revealed the prospect for new applications including silicon Raman lasers that require a strong confinement of light. Among various PhC-NCs, the highest Q has been recorded with silicon. On the other hand, microcavity is one of the basic building blocks in silicon photonics. However, the fusion between PhC-NCs and silicon photonics has yet to be exploited, since PhC-NCs are usually fabricated with electron-beam lithography and require an air-bridge structure. Here we show that a 2D-PhC-NC fabricated with deep-UV photolithography on a silica-clad silicon-on-insulator (SOI) structure will exhibit a high-Q of 2.2 ×10<sup>5</sup> with a mode-volume of ~1.7(λp/n)<sup>3</sup>. This is the highest Q demonstrated with photolithography. We also show that this device exhibits an efficient thermal diffusion and enables high-speed switching. The demonstration of the photolithographic fabrication of high-Q silica-clad PhC-NCs will open possibility for mass-manufacturing and boost the fusion between silicon photonics and CMOS devices.

    Original languageEnglish
    Article number11312
    JournalScientific Reports
    Volume5
    DOIs
    Publication statusPublished - 2015 Jun 18

    ASJC Scopus subject areas

    • General

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