CMOS design challenges to power wall

Tadahiro Kuroda

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    25 Citations (Scopus)

    Abstract

    CMOS power dissipation has been increasing due to the increase in power density. The power dissipation increased fourfold every three years until the early 1990's, due to a constant voltage scaling. Recently, a constant field scaling has been applied to reduce power dissipation, where the power density is increased proportional to the 0.7th power of scaling factor, resulting in power increase by twice every 6.5 years. It is considered that the power dissipation of CMOS chips will steadily be increased as a natural result of device scaling. Technology scaling will become difficult due to the power wall. On the other hand, future computer and communications technology will require further reduction in power dissipation. Since no new energy efficient device technology is on the horizon, low power CMOS design should be challenged. This paper discusses what and how much designers can do for CMOS power reduction.

    Original languageEnglish
    Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages6-7
    Number of pages2
    ISBN (Print)4891140178, 9784891140175
    DOIs
    Publication statusPublished - 2001
    EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
    Duration: 2001 Oct 312001 Nov 2

    Other

    OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
    CountryJapan
    CityShimane
    Period01/10/3101/11/2

    ASJC Scopus subject areas

    • Biotechnology
    • Fluid Flow and Transfer Processes
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Instrumentation

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