Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband

Junko Hayase, K. Akahane, N. Yamamoto, M. Kujiraoka, J. Inoue, K. Ema, M. Tsuchiya, M. Sasaki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We investigate the excitonic dephasing in a stack of self-assembled quantum dots (SAQDs) by using a four-wave-mixing (FWM) technique performed in the optical telecomm-fiber wavelength region at 6 K. A sample used in our experiment is a 150-layer stack of InAs SAQDs embedded in InGaAlAs grown on InP(3 1 1)B substrate fabricated by molecular beam epitaxy. By using a novel strain-controlled technique, the resonant wavelength of the exciton ground state (GS) ranges from 1.25 to 1.5 μm which is much longer than that in typical In(Ga)As SAQDs. In the weak excitation region, the intrinsic dephasing time of excitons at the excitation wavelength of 1.43 μm reaches 770 ps which is much longer than that in most SAQDs with the resonant wavelength of <1 μm. We also find a strong anisotoropy of the signal intensity with respect to the crystal axis attributed to the orientation of InP(3 1 1)B substrate and the elongated shape of QDs.

Original languageEnglish
Pages (from-to)318-322
Number of pages5
JournalJournal of Luminescence
Volume119-120
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2006 Jul
Externally publishedYes

Fingerprint

Quantum Dots
Semiconductor quantum dots
quantum dots
excitons
Wavelength
wavelengths
Optical Fibers
Four wave mixing
Substrates
Molecular beam epitaxy
Crystal orientation
four-wave mixing
Ground state
excitation
Optical fibers
molecular beam epitaxy
Crystals
ground state
fibers
LDS 751

Keywords

  • Dephasing
  • Four-wave mixing
  • Optical anisotropy
  • Quantum dot

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

Hayase, J., Akahane, K., Yamamoto, N., Kujiraoka, M., Inoue, J., Ema, K., ... Sasaki, M. (2006). Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband. Journal of Luminescence, 119-120(SPEC. ISS.), 318-322. https://doi.org/10.1016/j.jlumin.2006.01.008

Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband. / Hayase, Junko; Akahane, K.; Yamamoto, N.; Kujiraoka, M.; Inoue, J.; Ema, K.; Tsuchiya, M.; Sasaki, M.

In: Journal of Luminescence, Vol. 119-120, No. SPEC. ISS., 07.2006, p. 318-322.

Research output: Contribution to journalArticle

Hayase, J, Akahane, K, Yamamoto, N, Kujiraoka, M, Inoue, J, Ema, K, Tsuchiya, M & Sasaki, M 2006, 'Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband', Journal of Luminescence, vol. 119-120, no. SPEC. ISS., pp. 318-322. https://doi.org/10.1016/j.jlumin.2006.01.008
Hayase, Junko ; Akahane, K. ; Yamamoto, N. ; Kujiraoka, M. ; Inoue, J. ; Ema, K. ; Tsuchiya, M. ; Sasaki, M. / Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband. In: Journal of Luminescence. 2006 ; Vol. 119-120, No. SPEC. ISS. pp. 318-322.
@article{b24a3bb038424f79a47492ed32b92e3b,
title = "Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband",
abstract = "We investigate the excitonic dephasing in a stack of self-assembled quantum dots (SAQDs) by using a four-wave-mixing (FWM) technique performed in the optical telecomm-fiber wavelength region at 6 K. A sample used in our experiment is a 150-layer stack of InAs SAQDs embedded in InGaAlAs grown on InP(3 1 1)B substrate fabricated by molecular beam epitaxy. By using a novel strain-controlled technique, the resonant wavelength of the exciton ground state (GS) ranges from 1.25 to 1.5 μm which is much longer than that in typical In(Ga)As SAQDs. In the weak excitation region, the intrinsic dephasing time of excitons at the excitation wavelength of 1.43 μm reaches 770 ps which is much longer than that in most SAQDs with the resonant wavelength of <1 μm. We also find a strong anisotoropy of the signal intensity with respect to the crystal axis attributed to the orientation of InP(3 1 1)B substrate and the elongated shape of QDs.",
keywords = "Dephasing, Four-wave mixing, Optical anisotropy, Quantum dot",
author = "Junko Hayase and K. Akahane and N. Yamamoto and M. Kujiraoka and J. Inoue and K. Ema and M. Tsuchiya and M. Sasaki",
year = "2006",
month = "7",
doi = "10.1016/j.jlumin.2006.01.008",
language = "English",
volume = "119-120",
pages = "318--322",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",
number = "SPEC. ISS.",

}

TY - JOUR

T1 - Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband

AU - Hayase, Junko

AU - Akahane, K.

AU - Yamamoto, N.

AU - Kujiraoka, M.

AU - Inoue, J.

AU - Ema, K.

AU - Tsuchiya, M.

AU - Sasaki, M.

PY - 2006/7

Y1 - 2006/7

N2 - We investigate the excitonic dephasing in a stack of self-assembled quantum dots (SAQDs) by using a four-wave-mixing (FWM) technique performed in the optical telecomm-fiber wavelength region at 6 K. A sample used in our experiment is a 150-layer stack of InAs SAQDs embedded in InGaAlAs grown on InP(3 1 1)B substrate fabricated by molecular beam epitaxy. By using a novel strain-controlled technique, the resonant wavelength of the exciton ground state (GS) ranges from 1.25 to 1.5 μm which is much longer than that in typical In(Ga)As SAQDs. In the weak excitation region, the intrinsic dephasing time of excitons at the excitation wavelength of 1.43 μm reaches 770 ps which is much longer than that in most SAQDs with the resonant wavelength of <1 μm. We also find a strong anisotoropy of the signal intensity with respect to the crystal axis attributed to the orientation of InP(3 1 1)B substrate and the elongated shape of QDs.

AB - We investigate the excitonic dephasing in a stack of self-assembled quantum dots (SAQDs) by using a four-wave-mixing (FWM) technique performed in the optical telecomm-fiber wavelength region at 6 K. A sample used in our experiment is a 150-layer stack of InAs SAQDs embedded in InGaAlAs grown on InP(3 1 1)B substrate fabricated by molecular beam epitaxy. By using a novel strain-controlled technique, the resonant wavelength of the exciton ground state (GS) ranges from 1.25 to 1.5 μm which is much longer than that in typical In(Ga)As SAQDs. In the weak excitation region, the intrinsic dephasing time of excitons at the excitation wavelength of 1.43 μm reaches 770 ps which is much longer than that in most SAQDs with the resonant wavelength of <1 μm. We also find a strong anisotoropy of the signal intensity with respect to the crystal axis attributed to the orientation of InP(3 1 1)B substrate and the elongated shape of QDs.

KW - Dephasing

KW - Four-wave mixing

KW - Optical anisotropy

KW - Quantum dot

UR - http://www.scopus.com/inward/record.url?scp=33645147476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645147476&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2006.01.008

DO - 10.1016/j.jlumin.2006.01.008

M3 - Article

AN - SCOPUS:33645147476

VL - 119-120

SP - 318

EP - 322

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

IS - SPEC. ISS.

ER -