Coherent phonon study of (GeTe)l(Sb2Te3)m interfacial phase change memory materials

Kotaro Makino, Yuta Saito, Paul Fons, Alexander V. Kolobov, Takashi Nakano, Junji Tominaga, Muneaki Hase

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12 Citations (Scopus)

Abstract

The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)2(Sb2Te3)4]8 and [(GeTe)2(Sb2Te3)1]20) as well as conventional Ge2Sb2Te5 alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.

Original languageEnglish
Article number151902
JournalApplied Physics Letters
Volume105
Issue number15
DOIs
Publication statusPublished - 2014 Oct 13

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Makino, K., Saito, Y., Fons, P., Kolobov, A. V., Nakano, T., Tominaga, J., & Hase, M. (2014). Coherent phonon study of (GeTe)l(Sb2Te3)m interfacial phase change memory materials. Applied Physics Letters, 105(15), [151902]. https://doi.org/10.1063/1.4897997