Coherent phonon study of (GeTe)l(Sb2Te3)m interfacial phase change memory materials

Kotaro Makino; Yuta Saito; Paul Fons; Alexander V. Kolobov; Takashi Nakano; Junji Tominaga; Muneaki Hase

doi:10.1063/1.4897997

Coherent phonon study of (GeTe)_l(Sb₂Te₃)_m interfacial phase change memory materials

Kotaro Makino, Yuta Saito, Paul Fons, Alexander V. Kolobov, Takashi Nakano, Junji Tominaga, Muneaki Hase

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)₂(Sb₂Te₃)₄]₈ and [(GeTe)₂(Sb₂Te₃)₁]₂₀) as well as conventional Ge₂Sb₂Te₅ alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.

Original language	English
Article number	151902
Journal	Applied Physics Letters
Volume	105
Issue number	15
DOIs	https://doi.org/10.1063/1.4897997
Publication status	Published - 2014 Oct 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{e8187aaa4a1a4028911547f5dddb4fe1,

title = "Coherent phonon study of (GeTe)l(Sb2Te3)m interfacial phase change memory materials",

abstract = "The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)2(Sb2Te3)4]8 and [(GeTe)2(Sb2Te3)1]20) as well as conventional Ge2Sb2Te5 alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.",

author = "Kotaro Makino and Yuta Saito and Paul Fons and Kolobov, {Alexander V.} and Takashi Nakano and Junji Tominaga and Muneaki Hase",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = oct,

day = "13",

doi = "10.1063/1.4897997",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Coherent phonon study of (GeTe)l(Sb2Te3)m interfacial phase change memory materials

AU - Makino, Kotaro

AU - Saito, Yuta

AU - Fons, Paul

AU - Kolobov, Alexander V.

AU - Nakano, Takashi

AU - Tominaga, Junji

AU - Hase, Muneaki

PY - 2014/10/13

Y1 - 2014/10/13

N2 - The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)2(Sb2Te3)4]8 and [(GeTe)2(Sb2Te3)1]20) as well as conventional Ge2Sb2Te5 alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.

AB - The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)2(Sb2Te3)4]8 and [(GeTe)2(Sb2Te3)1]20) as well as conventional Ge2Sb2Te5 alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.

UR - http://www.scopus.com/inward/record.url?scp=84907979717&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907979717&partnerID=8YFLogxK

U2 - 10.1063/1.4897997

DO - 10.1063/1.4897997

M3 - Article

AN - SCOPUS:84907979717

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151902

ER -

Coherent phonon study of (GeTe)_l(Sb₂Te₃)_m interfacial phase change memory materials

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