Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

R. C.C. Leon, C. H. Yang, J. C.C. Hwang, J. Camirand Lemyre, T. Tanttu, W. Huang, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, M. Pioro-Ladrière, A. Saraiva, A. S. Dzurak

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Once the periodic properties of elements were unveiled, chemical behaviour could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in semiconductor materials disrupt this analogy, so real devices seldom display a systematic many-electron arrangement. We demonstrate here an electrostatically confined quantum dot that reveals a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. Various fillings containing a single valence electron—namely 1, 5, 13 and 25 electrons—are found to be potential qubits. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR), leading to faster Rabi rotations and higher fidelity single qubit gates at higher shell states. We investigate the impact of orbital excitations on single qubits as a function of the dot deformation and exploit it for faster qubit control.

Original languageEnglish
Article number797
JournalNature communications
Volume11
Issue number1
DOIs
Publication statusPublished - 2020 Dec 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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