Comparison of self-heating effect (SHE) in short-channel bulk and ultra-thin BOX SOI MOSFETs: Impacts of doped well, ambient temperature, and SOI/BOX thicknesses on SHE

Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

Self-heating effects (SHEs) of bulk and SOI FETs including 6-nm ultra-thin (UT) BOX devices are systematically investigated and compared using the four-terminal gate resistance technique. For bulk FETs, it has been verified for the first time that the SHE is not negligible in nanoscale devices mainly owing to a decrease in the thermal conductivity of the more heavily doped well. Furthermore, it has been demonstrated that the magnitude of the SHE strongly depends on the chip (ambient) temperature (Tchip). For SOI FETs, the impacts of BOX/SOI thinning are evaluated and explained in terms of the thermal conductivities of materials within heat dissipation paths. It has been demonstrated that the device temperature of 6-nm UT BOX SOI FETs is close to that of bulk FETs at Tchip under operating conditions. A thermal-aware device design of the UT Body and BOX (UTBB) structure is proposed on the basis of the evaluated BOX/SOI thickness dependences of the SHE. The SHE of UTBB FETs with a raised source/drain and/or shorter contact pitch could be comparable to that of bulk FETs in deeply scaled nodes. In addition, the doping concentration under the BOX should be optimized in order to achieve low and Tchip-independent SHE.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

Fingerprint

SOI (semiconductors)
Field effect transistors
ambient temperature
field effect transistors
Heating
heating
Temperature
Thermal conductivity
thermal conductivity
thin bodies
Heat losses
chips
Doping (additives)
cooling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Takahashi, T., Matsuki, T., Shinada, T., Inoue, Y., & Uchida, K. (2013). Comparison of self-heating effect (SHE) in short-channel bulk and ultra-thin BOX SOI MOSFETs: Impacts of doped well, ambient temperature, and SOI/BOX thicknesses on SHE. In Technical Digest - International Electron Devices Meeting, IEDM [6724581] https://doi.org/10.1109/IEDM.2013.6724581

Comparison of self-heating effect (SHE) in short-channel bulk and ultra-thin BOX SOI MOSFETs : Impacts of doped well, ambient temperature, and SOI/BOX thicknesses on SHE. / Takahashi, Tsunaki; Matsuki, Takeo; Shinada, Takahiro; Inoue, Yasuo; Uchida, Ken.

Technical Digest - International Electron Devices Meeting, IEDM. 2013. 6724581.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takahashi, T, Matsuki, T, Shinada, T, Inoue, Y & Uchida, K 2013, Comparison of self-heating effect (SHE) in short-channel bulk and ultra-thin BOX SOI MOSFETs: Impacts of doped well, ambient temperature, and SOI/BOX thicknesses on SHE. in Technical Digest - International Electron Devices Meeting, IEDM., 6724581, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 13/12/9. https://doi.org/10.1109/IEDM.2013.6724581
Takahashi, Tsunaki ; Matsuki, Takeo ; Shinada, Takahiro ; Inoue, Yasuo ; Uchida, Ken. / Comparison of self-heating effect (SHE) in short-channel bulk and ultra-thin BOX SOI MOSFETs : Impacts of doped well, ambient temperature, and SOI/BOX thicknesses on SHE. Technical Digest - International Electron Devices Meeting, IEDM. 2013.
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