Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot

T. Nakaoka; Y. Tamura; T. Saito; T. Miyazawa; K. Watanabe; Y. Ota; S. Iwamoto; Y. Arakawa

doi:10.1063/1.3658639

Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot

T. Nakaoka, Y. Tamura, T. Saito, T. Miyazawa, K. Watanabe, Y. Ota, S. Iwamoto, Y. Arakawa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report on the fabrication of a side-gate structure which enables a purely lateral electric field to be applied onto a self-assembled quantum dot. The lateral field produces an unconventional M'-shaped exciton energy shift-a blueshift followed by a redshift. The unconventional energy shift is reproduced by calculation. The calculation shows that only the positively charged exciton shows the unconventional shift. The origin is attributed to the field-induced hole-concentration in the bottom-corner of the dot, which strongly enhances the repulsive direct Coulomb interaction and reduces the exciton binding energy.

Original language	English
Article number	181109
Journal	Applied Physics Letters
Volume	99
Issue number	18
DOIs	https://doi.org/10.1063/1.3658639
Publication status	Published - 2011 Oct 31
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{ee671749dbf44be6acb7ee50c48def05,

title = "Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot",

abstract = "We report on the fabrication of a side-gate structure which enables a purely lateral electric field to be applied onto a self-assembled quantum dot. The lateral field produces an unconventional M'-shaped exciton energy shift-a blueshift followed by a redshift. The unconventional energy shift is reproduced by calculation. The calculation shows that only the positively charged exciton shows the unconventional shift. The origin is attributed to the field-induced hole-concentration in the bottom-corner of the dot, which strongly enhances the repulsive direct Coulomb interaction and reduces the exciton binding energy.",

author = "T. Nakaoka and Y. Tamura and T. Saito and T. Miyazawa and K. Watanabe and Y. Ota and S. Iwamoto and Y. Arakawa",

note = "Funding Information: We thank Dr. Keiji Ono of RIKEN and Prof. Seigo Tarucha of the University of Tokyo for their collaboration. This work was supported in part by Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.",

year = "2011",

month = oct,

day = "31",

doi = "10.1063/1.3658639",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot

AU - Nakaoka, T.

AU - Tamura, Y.

AU - Saito, T.

AU - Miyazawa, T.

AU - Watanabe, K.

AU - Ota, Y.

AU - Iwamoto, S.

AU - Arakawa, Y.

N1 - Funding Information: We thank Dr. Keiji Ono of RIKEN and Prof. Seigo Tarucha of the University of Tokyo for their collaboration. This work was supported in part by Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.

PY - 2011/10/31

Y1 - 2011/10/31

N2 - We report on the fabrication of a side-gate structure which enables a purely lateral electric field to be applied onto a self-assembled quantum dot. The lateral field produces an unconventional M'-shaped exciton energy shift-a blueshift followed by a redshift. The unconventional energy shift is reproduced by calculation. The calculation shows that only the positively charged exciton shows the unconventional shift. The origin is attributed to the field-induced hole-concentration in the bottom-corner of the dot, which strongly enhances the repulsive direct Coulomb interaction and reduces the exciton binding energy.

AB - We report on the fabrication of a side-gate structure which enables a purely lateral electric field to be applied onto a self-assembled quantum dot. The lateral field produces an unconventional M'-shaped exciton energy shift-a blueshift followed by a redshift. The unconventional energy shift is reproduced by calculation. The calculation shows that only the positively charged exciton shows the unconventional shift. The origin is attributed to the field-induced hole-concentration in the bottom-corner of the dot, which strongly enhances the repulsive direct Coulomb interaction and reduces the exciton binding energy.

UR - http://www.scopus.com/inward/record.url?scp=80855124811&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80855124811&partnerID=8YFLogxK

U2 - 10.1063/1.3658639

DO - 10.1063/1.3658639

M3 - Article

AN - SCOPUS:80855124811

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181109

ER -

Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot

Abstract

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