Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot

T. Nakaoka, Y. Tamura, T. Saito, T. Miyazawa, K. Watanabe, Y. Ota, S. Iwamoto, Y. Arakawa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We report on the fabrication of a side-gate structure which enables a purely lateral electric field to be applied onto a self-assembled quantum dot. The lateral field produces an unconventional M'-shaped exciton energy shift-a blueshift followed by a redshift. The unconventional energy shift is reproduced by calculation. The calculation shows that only the positively charged exciton shows the unconventional shift. The origin is attributed to the field-induced hole-concentration in the bottom-corner of the dot, which strongly enhances the repulsive direct Coulomb interaction and reduces the exciton binding energy.

Original languageEnglish
Article number181109
JournalApplied Physics Letters
Volume99
Issue number18
DOIs
Publication statusPublished - 2011 Oct 31
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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