Complete recovery of subsurface structures of machining-damaged single crystalline silicon by Nd:YAG laser irradiation

Jiwang Yan, Tooru Asami, Tsunemoto Kuriyagawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ultraprecision diamond-cut silicon wafers were irradiated by a nanosecond pulsed Nd:YAG laser, and the resulting specimens were characterized using transmission electron microscopy and micro-Raman spectroscopy. The results indicate that at specific laser energy density levels, machining-induced amorphous layers and dislocated layers were both reconstructed to a complete single-crystal structure identical to the bulk region. Similar effects were confirmed for diamond-ground silicon wafers. Effects of overlapping irradiation were investigated and perfect crystallographic uniformity was achieved in the boundary region. The recovery process involved rapid melting of the near-surface amorphous layer, followed by epitaxial regrowth from the damage-free crystalline bulk.

Original languageEnglish
Pages (from-to)469-474
Number of pages6
JournalKey Engineering Materials
Volume389-390
Publication statusPublished - 2009 Jan 1
Externally publishedYes

Keywords

  • Nd:YAG laser
  • Phase transformation
  • Single crystal silicon
  • Subsurface damage

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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