Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation

Jiwang Yan, Tooru Asami, Tsunemoto Kuriyagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd: YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single crystalline structure identical to the bulk. Laser irradiation causes two effects to silicon: one is the rapid melting and epitaxial regrowth of the near-surface amorphous layer; the other is the activation and complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline bulk region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.

Original languageEnglish
Title of host publicationLEM 2007 - 4th International Conference on Leading Edge Manufacturing in 21st Century, Proceedings
Publication statusPublished - 2007
Externally publishedYes
Event4th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2007 - Fukuoka, Japan
Duration: 2007 Nov 72007 Nov 9

Other

Other4th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2007
CountryJapan
CityFukuoka
Period07/11/707/11/9

Fingerprint

Laser beam effects
Restoration
Crystalline materials
Silicon
Dislocations (crystals)
Silicon wafers
Lasers
Seed
Diamonds
Machining
Melting
Chemical activation
Processing

Keywords

  • Ductile machining
  • Laser
  • Silicon
  • Single crystal
  • Subsurface damage
  • Ultraprecision machining

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering

Cite this

Yan, J., Asami, T., & Kuriyagawa, T. (2007). Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation. In LEM 2007 - 4th International Conference on Leading Edge Manufacturing in 21st Century, Proceedings

Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation. / Yan, Jiwang; Asami, Tooru; Kuriyagawa, Tsunemoto.

LEM 2007 - 4th International Conference on Leading Edge Manufacturing in 21st Century, Proceedings. 2007.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yan, J, Asami, T & Kuriyagawa, T 2007, Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation. in LEM 2007 - 4th International Conference on Leading Edge Manufacturing in 21st Century, Proceedings. 4th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2007, Fukuoka, Japan, 07/11/7.
Yan J, Asami T, Kuriyagawa T. Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation. In LEM 2007 - 4th International Conference on Leading Edge Manufacturing in 21st Century, Proceedings. 2007
Yan, Jiwang ; Asami, Tooru ; Kuriyagawa, Tsunemoto. / Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation. LEM 2007 - 4th International Conference on Leading Edge Manufacturing in 21st Century, Proceedings. 2007.
@inproceedings{7586a705dccd41f0b9aefbaa19c929ef,
title = "Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation",
abstract = "Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd: YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single crystalline structure identical to the bulk. Laser irradiation causes two effects to silicon: one is the rapid melting and epitaxial regrowth of the near-surface amorphous layer; the other is the activation and complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline bulk region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.",
keywords = "Ductile machining, Laser, Silicon, Single crystal, Subsurface damage, Ultraprecision machining",
author = "Jiwang Yan and Tooru Asami and Tsunemoto Kuriyagawa",
year = "2007",
language = "English",
booktitle = "LEM 2007 - 4th International Conference on Leading Edge Manufacturing in 21st Century, Proceedings",

}

TY - GEN

T1 - Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation

AU - Yan, Jiwang

AU - Asami, Tooru

AU - Kuriyagawa, Tsunemoto

PY - 2007

Y1 - 2007

N2 - Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd: YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single crystalline structure identical to the bulk. Laser irradiation causes two effects to silicon: one is the rapid melting and epitaxial regrowth of the near-surface amorphous layer; the other is the activation and complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline bulk region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.

AB - Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd: YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single crystalline structure identical to the bulk. Laser irradiation causes two effects to silicon: one is the rapid melting and epitaxial regrowth of the near-surface amorphous layer; the other is the activation and complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline bulk region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.

KW - Ductile machining

KW - Laser

KW - Silicon

KW - Single crystal

KW - Subsurface damage

KW - Ultraprecision machining

UR - http://www.scopus.com/inward/record.url?scp=84883342224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883342224&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84883342224

BT - LEM 2007 - 4th International Conference on Leading Edge Manufacturing in 21st Century, Proceedings

ER -