Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation

Jiwang Yan, Tooru Asami, Tsunemoto Kuriyagawa

Research output: Contribution to conferencePaper

Abstract

Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd: YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single crystalline structure identical to the bulk. Laser irradiation causes two effects to silicon: one is the rapid melting and epitaxial regrowth of the near-surface amorphous layer; the other is the activation and complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline bulk region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.

Original languageEnglish
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event4th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2007 - Fukuoka, Japan
Duration: 2007 Nov 72007 Nov 9

Other

Other4th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2007
CountryJapan
CityFukuoka
Period07/11/707/11/9

Keywords

  • Ductile machining
  • Laser
  • Silicon
  • Single crystal
  • Subsurface damage
  • Ultraprecision machining

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering

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  • Cite this

    Yan, J., Asami, T., & Kuriyagawa, T. (2007). Complete restoration of the subsurface damages in single-crystalline silicon by laser irradiation. Paper presented at 4th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2007, Fukuoka, Japan.