Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Toshinori Numata, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We present the systematic study on dominant factors of the performance of scaled (110) n/pFETs. STI stress effects and velocity saturation phenomena in narrow and short (110) devices are investigated for the first time. I dsat of scaled (110) nFETs approaches (100) nFETs as a result of μ increase due to transverse compressive stress from STI in (110) nFETs and strong velocity saturation in (100) nFETs. Meanwhile, I dsat of scaled (110) pFETs are still superior to (100) pFETs due to high μ of (110) pFETs and weaker velocity saturation than nFETs as long as R sd of (110) pFETs is well suppressed. As a result, scaled (110) CMOS shows excellent performance even without intentional stressors.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Saitoh, M., Yasutake, N., Nakabayashi, Y., Numata, T., & Uchida, K. (2008). Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796754] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796754