Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation

Masumi Saitoh; Nobuaki Yasutake; Yukio Nakabayashi; Toshinori Numata; Ken Uchida

doi:10.1109/IEDM.2008.4796754

Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Toshinori Numata, Ken Uchida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We present the systematic study on dominant factors of the performance of scaled (110) n/pFETs. STI stress effects and velocity saturation phenomena in narrow and short (110) devices are investigated for the first time. I _dsat of scaled (110) nFETs approaches (100) nFETs as a result of μ increase due to transverse compressive stress from STI in (110) nFETs and strong velocity saturation in (100) nFETs. Meanwhile, I _dsat of scaled (110) pFETs are still superior to (100) pFETs due to high μ of (110) pFETs and weaker velocity saturation than nFETs as long as R _sd of (110) pFETs is well suppressed. As a result, scaled (110) CMOS shows excellent performance even without intentional stressors.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796754
Publication status	Published - 2008 Dec 1
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2008.4796754

Cite this

Saitoh, M., Yasutake, N., Nakabayashi, Y., Numata, T., & Uchida, K. (2008). Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796754] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796754

Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation. / Saitoh, Masumi; Yasutake, Nobuaki; Nakabayashi, Yukio et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796754 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saitoh, M, Yasutake, N, Nakabayashi, Y, Numata, T & Uchida, K 2008, Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796754, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796754

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abstract = "We present the systematic study on dominant factors of the performance of scaled (110) n/pFETs. STI stress effects and velocity saturation phenomena in narrow and short (110) devices are investigated for the first time. I dsat of scaled (110) nFETs approaches (100) nFETs as a result of μ increase due to transverse compressive stress from STI in (110) nFETs and strong velocity saturation in (100) nFETs. Meanwhile, I dsat of scaled (110) pFETs are still superior to (100) pFETs due to high μ of (110) pFETs and weaker velocity saturation than nFETs as long as R sd of (110) pFETs is well suppressed. As a result, scaled (110) CMOS shows excellent performance even without intentional stressors.",

author = "Masumi Saitoh and Nobuaki Yasutake and Yukio Nakabayashi and Toshinori Numata and Ken Uchida",

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Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation

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