Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs

A. Kinoshita, T. Kinoshita, Y. Nishi, Ken Uchida, S. Toriyama, R. Hasumi, J. Koga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 2006 Dec 102006 Dec 13

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period06/12/1006/12/13

Fingerprint

Doping (additives)
Carrier transport

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kinoshita, A., Kinoshita, T., Nishi, Y., Uchida, K., Toriyama, S., Hasumi, R., & Koga, J. (2006). Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs. In Technical Digest - International Electron Devices Meeting, IEDM [4154398] https://doi.org/10.1109/IEDM.2006.346963

Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs. / Kinoshita, A.; Kinoshita, T.; Nishi, Y.; Uchida, Ken; Toriyama, S.; Hasumi, R.; Koga, J.

Technical Digest - International Electron Devices Meeting, IEDM. 2006. 4154398.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kinoshita, A, Kinoshita, T, Nishi, Y, Uchida, K, Toriyama, S, Hasumi, R & Koga, J 2006, Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs. in Technical Digest - International Electron Devices Meeting, IEDM., 4154398, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346963
Kinoshita A, Kinoshita T, Nishi Y, Uchida K, Toriyama S, Hasumi R et al. Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs. In Technical Digest - International Electron Devices Meeting, IEDM. 2006. 4154398 https://doi.org/10.1109/IEDM.2006.346963
Kinoshita, A. ; Kinoshita, T. ; Nishi, Y. ; Uchida, Ken ; Toriyama, S. ; Hasumi, R. ; Koga, J. / Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM. 2006.
@inproceedings{787bb3e4f5e64225a7c4348ee9643553,
title = "Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs",
abstract = "The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study.",
author = "A. Kinoshita and T. Kinoshita and Y. Nishi and Ken Uchida and S. Toriyama and R. Hasumi and J. Koga",
year = "2006",
doi = "10.1109/IEDM.2006.346963",
language = "English",
isbn = "1424404398",
booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

}

TY - GEN

T1 - Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs

AU - Kinoshita, A.

AU - Kinoshita, T.

AU - Nishi, Y.

AU - Uchida, Ken

AU - Toriyama, S.

AU - Hasumi, R.

AU - Koga, J.

PY - 2006

Y1 - 2006

N2 - The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study.

AB - The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study.

UR - http://www.scopus.com/inward/record.url?scp=46049108176&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=46049108176&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2006.346963

DO - 10.1109/IEDM.2006.346963

M3 - Conference contribution

SN - 1424404398

SN - 9781424404391

BT - Technical Digest - International Electron Devices Meeting, IEDM

ER -