Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs

A. Kinoshita, T. Kinoshita, Y. Nishi, K. Uchida, S. Toriyama, R. Hasumi, J. Koga

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    17 Citations (Scopus)

    Abstract

    The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study.

    Original languageEnglish
    Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
    DOIs
    Publication statusPublished - 2006 Dec 1
    Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
    Duration: 2006 Dec 102006 Dec 13

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2006 International Electron Devices Meeting, IEDM
    CountryUnited States
    CitySan Francisco, CA
    Period06/12/1006/12/13

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Kinoshita, A., Kinoshita, T., Nishi, Y., Uchida, K., Toriyama, S., Hasumi, R., & Koga, J. (2006). Comprehensive study on injection velocity enhancement in dopant-segregated schottky MOSFETs. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154398] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346963