Conductivity phase transition with shift of valence-band edge and with structural distortion in Cu4Sn1-xGe xS4

Takayuki Kamimura, Masanori Matoba, Shuichiro Anzai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

X-ray diffraction, electrical resistivity, DSC and XPS investigations were carried out on Cu4Sn1-x.GexS 4 (0≤x≤1.0). At room temperature, the orthorhombic structure changes to a monoclinic one at a transition concentration of xt-0.6 as x increases. This transition also exhibits the expansions in the energy width between the top of the valence band and the Fermi level and in the lattice parameter B. The transition has the characteristics of the first-order high (high temperature)-to-low (low temperature) conductivity phase transition as reported on Cu4SnS4. The transition temperature T t linearly increases with x. These features are briefly compared with the electronic and structural phase transition reported on SnTe and Pb 1-xGexTe.

Original languageEnglish
Pages (from-to)3045-3048
Number of pages4
JournalJournal of the Physical Society of Japan
Volume59
Issue number9
Publication statusPublished - 1990 Sep

Fingerprint

valence
conductivity
shift
lattice parameters
transition temperature
electrical resistivity
expansion
room temperature
electronics
diffraction
x rays
energy

Keywords

  • Conductivity phase transition
  • CuSnGeS solid solution
  • Distortive structural transition
  • Electronic and structural phase transition
  • Latent heat of transition
  • Shift of valence band edge
  • XPS

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Conductivity phase transition with shift of valence-band edge and with structural distortion in Cu4Sn1-xGe xS4 . / Kamimura, Takayuki; Matoba, Masanori; Anzai, Shuichiro.

In: Journal of the Physical Society of Japan, Vol. 59, No. 9, 09.1990, p. 3045-3048.

Research output: Contribution to journalArticle

@article{e4e8d343cc3348aba6449a5a8ffe29c7,
title = "Conductivity phase transition with shift of valence-band edge and with structural distortion in Cu4Sn1-xGe xS4",
abstract = "X-ray diffraction, electrical resistivity, DSC and XPS investigations were carried out on Cu4Sn1-x.GexS 4 (0≤x≤1.0). At room temperature, the orthorhombic structure changes to a monoclinic one at a transition concentration of xt-0.6 as x increases. This transition also exhibits the expansions in the energy width between the top of the valence band and the Fermi level and in the lattice parameter B. The transition has the characteristics of the first-order high (high temperature)-to-low (low temperature) conductivity phase transition as reported on Cu4SnS4. The transition temperature T t linearly increases with x. These features are briefly compared with the electronic and structural phase transition reported on SnTe and Pb 1-xGexTe.",
keywords = "Conductivity phase transition, CuSnGeS solid solution, Distortive structural transition, Electronic and structural phase transition, Latent heat of transition, Shift of valence band edge, XPS",
author = "Takayuki Kamimura and Masanori Matoba and Shuichiro Anzai",
year = "1990",
month = "9",
language = "English",
volume = "59",
pages = "3045--3048",
journal = "Journal of the Physical Society of Japan",
issn = "0031-9015",
publisher = "Physical Society of Japan",
number = "9",

}

TY - JOUR

T1 - Conductivity phase transition with shift of valence-band edge and with structural distortion in Cu4Sn1-xGe xS4

AU - Kamimura, Takayuki

AU - Matoba, Masanori

AU - Anzai, Shuichiro

PY - 1990/9

Y1 - 1990/9

N2 - X-ray diffraction, electrical resistivity, DSC and XPS investigations were carried out on Cu4Sn1-x.GexS 4 (0≤x≤1.0). At room temperature, the orthorhombic structure changes to a monoclinic one at a transition concentration of xt-0.6 as x increases. This transition also exhibits the expansions in the energy width between the top of the valence band and the Fermi level and in the lattice parameter B. The transition has the characteristics of the first-order high (high temperature)-to-low (low temperature) conductivity phase transition as reported on Cu4SnS4. The transition temperature T t linearly increases with x. These features are briefly compared with the electronic and structural phase transition reported on SnTe and Pb 1-xGexTe.

AB - X-ray diffraction, electrical resistivity, DSC and XPS investigations were carried out on Cu4Sn1-x.GexS 4 (0≤x≤1.0). At room temperature, the orthorhombic structure changes to a monoclinic one at a transition concentration of xt-0.6 as x increases. This transition also exhibits the expansions in the energy width between the top of the valence band and the Fermi level and in the lattice parameter B. The transition has the characteristics of the first-order high (high temperature)-to-low (low temperature) conductivity phase transition as reported on Cu4SnS4. The transition temperature T t linearly increases with x. These features are briefly compared with the electronic and structural phase transition reported on SnTe and Pb 1-xGexTe.

KW - Conductivity phase transition

KW - CuSnGeS solid solution

KW - Distortive structural transition

KW - Electronic and structural phase transition

KW - Latent heat of transition

KW - Shift of valence band edge

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=77952861677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952861677&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:77952861677

VL - 59

SP - 3045

EP - 3048

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

SN - 0031-9015

IS - 9

ER -