Conductivity Phase Transition with Shift of Valence-Band Edge and with Structural Distortion in Cu4Sn1-xGexS4

Takayuki Kamimura, Masanori Matoba, Shuichiro Anzai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

X-ray diffraction, electrical resistivity, DSC and XPS investigations were carried out on Cu4Sn1-xGexS4 (0≦x≦1.0). At room temperature, the orthorhombic structure changes to a monoclinic one at a transition concentration of xt=0.6 as x increases. This transition also exhibits the expansions in the energy width between the top of the valence band and the Fermi level and in the lattice parameter B. The transition has the characteristics of the first-order high (high temperature)-to-low (low temperature) conductivity phase transition as reported on Cu4SnS4. The transition temperature Tt linearly increases with x. These features are briefly compared with the electronic and structural phase transition reported on SnTe and Pb1-xGexTe.

Original languageEnglish
Pages (from-to)3045-3048
Number of pages4
JournalJournal of the Physical Society of Japan
Volume59
Issue number9
DOIs
Publication statusPublished - 1990 Jan 1

Keywords

  • Cu4Sn1-xGexS4 solid solution
  • XPS
  • conductivity phase transition
  • distortive structural transition
  • electronic and structural phase transition
  • latent heat of transition
  • shift of valence band edge

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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