Conical potential model for InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses

Akira Endoh; Yoshiki Sakuma; Motomu Takatsu; Yuji Awano; Naoki Yokoyama

doi:10.1063/1.1308100

Conical potential model for InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses

Akira Endoh, Yoshiki Sakuma, Motomu Takatsu, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journal › Article

Abstract

We developed a conical potential model for InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses (TSRs) and evaluated the diameter and average indium (In) content of TSR quantum dots by combining with magnetophotoluminescence (PL) measurements. The model calculations of the PL peak energy and its diamagnetic shift of TSR quantum dots were performed using the effective mass approximation method. We found that the diameter and the ratio of average In content of a TSR quantum dot to that of the surrounding quantum well are independent of the flow rate of trimethylindium, which is the source gas of In, in the range of our experiments. The negative diamagnetic shift of the PL peak from the first excited state transition, which was observed for the "In-rich" sample, could be explained by the contributions of two different energy levels with a different angular momentum.

Original language	English
Pages (from-to)	4745-4748
Number of pages	4
Journal	Journal of Applied Physics
Volume	88
Issue number	8
DOIs	https://doi.org/10.1063/1.1308100
Publication status	Published - 2000 Oct
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy(all)

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Endoh, A., Sakuma, Y., Takatsu, M., Awano, Y., & Yokoyama, N. (2000). Conical potential model for InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses. Journal of Applied Physics, 88(8), 4745-4748. https://doi.org/10.1063/1.1308100

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AU - Awano, Yuji

AU - Yokoyama, Naoki

PY - 2000/10

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10.1063/1.1308100