Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

Shunsuke Takagaki, Hirofumi Yamada, Kei Noda

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Abstract

Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

Original languageEnglish
Article number03EH04
JournalJapanese Journal of Applied Physics
Volume57
Issue number3
DOIs
Publication statusPublished - 2018 Mar 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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