Contactless Measurement of Short Carrier Lifetime in Heat-treated N-type Silicon

Makoto Sakata; Tatsuya Yamazaki; Yoh Ichiro Ogita; Yoshikazu Ikegami; Hiroshi Onaka; Eiji Ohta

doi:10.1143/JJAP.23.322

Contactless Measurement of Short Carrier Lifetime in Heat-treated N-type Silicon

Makoto Sakata, Tatsuya Yamazaki, Yoh Ichiro Ogita, Yoshikazu Ikegami, Hiroshi Onaka, Eiji Ohta

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at E_v+0.39 eV acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0.07 µsec, and resistivity-lifetime products, ρτ=0.1 Ωcm · µsec, have been achieved.

Original language	English
Pages (from-to)	322-325
Number of pages	4
Journal	Japanese journal of applied physics
Volume	23
Issue number	3
DOIs	https://doi.org/10.1143/JJAP.23.322
Publication status	Published - 1984 Mar
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.23.322

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abstract = "Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at Ev+0.39 eV acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0.07 µsec, and resistivity-lifetime products, ρτ=0.1 Ωcm · µsec, have been achieved.",

author = "Makoto Sakata and Tatsuya Yamazaki and Ogita, {Yoh Ichiro} and Yoshikazu Ikegami and Hiroshi Onaka and Eiji Ohta",

year = "1984",

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AU - Sakata, Makoto

AU - Yamazaki, Tatsuya

AU - Ogita, Yoh Ichiro

AU - Ikegami, Yoshikazu

AU - Onaka, Hiroshi

AU - Ohta, Eiji

PY - 1984/3

Y1 - 1984/3

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AB - Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at Ev+0.39 eV acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0.07 µsec, and resistivity-lifetime products, ρτ=0.1 Ωcm · µsec, have been achieved.

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Contactless Measurement of Short Carrier Lifetime in Heat-treated N-type Silicon

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