Contactless Measurement of Short Carrier Lifetime in Heat-treated N-type Silicon

Makoto Sakata, Tatsuya Yamazaki, Yoh Ichiro Ogita, Yoshikazu Ikegami, Hiroshi Onaka, Eiji Ohta

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3 Citations (Scopus)

Abstract

Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at Ev+0.39 eV acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0.07 µsec, and resistivity-lifetime products, ρτ=0.1 Ωcm · µsec, have been achieved.

Original languageEnglish
Pages (from-to)322-325
Number of pages4
JournalJapanese journal of applied physics
Volume23
Issue number3
DOIs
Publication statusPublished - 1984 Mar

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Sakata, M., Yamazaki, T., Ogita, Y. I., Ikegami, Y., Onaka, H., & Ohta, E. (1984). Contactless Measurement of Short Carrier Lifetime in Heat-treated N-type Silicon. Japanese journal of applied physics, 23(3), 322-325. https://doi.org/10.1143/JJAP.23.322