CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON.

Tatsuya Yamazaki, Yoh ichiro Ogita, Yoshikazu Ikegami, Hiroshi Onaka, Eiji Ohta, Makoto Sakata

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at E//v plus 0. 39 ev acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0. 07 mu sec, and resistivity-lifetime products, rho tau equals 0. 1 OMEGA cm multiplied by (times) mu sec, have been achieved.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Pages322-325
Number of pages4
Volume23
Edition3
Publication statusPublished - 1984 Mar

Fingerprint

Carrier lifetime
Electric properties
Capacitance
Silicon
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamazaki, T., Ogita, Y. I., Ikegami, Y., Onaka, H., Ohta, E., & Sakata, M. (1984). CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes (3 ed., Vol. 23, pp. 322-325)

CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON. / Yamazaki, Tatsuya; Ogita, Yoh ichiro; Ikegami, Yoshikazu; Onaka, Hiroshi; Ohta, Eiji; Sakata, Makoto.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. Vol. 23 3. ed. 1984. p. 322-325.

Research output: Chapter in Book/Report/Conference proceedingChapter

Yamazaki, T, Ogita, YI, Ikegami, Y, Onaka, H, Ohta, E & Sakata, M 1984, CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON. in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 3 edn, vol. 23, pp. 322-325.
Yamazaki T, Ogita YI, Ikegami Y, Onaka H, Ohta E, Sakata M. CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 3 ed. Vol. 23. 1984. p. 322-325
Yamazaki, Tatsuya ; Ogita, Yoh ichiro ; Ikegami, Yoshikazu ; Onaka, Hiroshi ; Ohta, Eiji ; Sakata, Makoto. / CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. Vol. 23 3. ed. 1984. pp. 322-325
@inbook{e957a1c1cb024ab097d1cc294dc3e9b5,
title = "CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON.",
abstract = "Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at E//v plus 0. 39 ev acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0. 07 mu sec, and resistivity-lifetime products, rho tau equals 0. 1 OMEGA cm multiplied by (times) mu sec, have been achieved.",
author = "Tatsuya Yamazaki and Ogita, {Yoh ichiro} and Yoshikazu Ikegami and Hiroshi Onaka and Eiji Ohta and Makoto Sakata",
year = "1984",
month = "3",
language = "English",
volume = "23",
pages = "322--325",
booktitle = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
edition = "3",

}

TY - CHAP

T1 - CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON.

AU - Yamazaki, Tatsuya

AU - Ogita, Yoh ichiro

AU - Ikegami, Yoshikazu

AU - Onaka, Hiroshi

AU - Ohta, Eiji

AU - Sakata, Makoto

PY - 1984/3

Y1 - 1984/3

N2 - Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at E//v plus 0. 39 ev acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0. 07 mu sec, and resistivity-lifetime products, rho tau equals 0. 1 OMEGA cm multiplied by (times) mu sec, have been achieved.

AB - Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at E//v plus 0. 39 ev acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0. 07 mu sec, and resistivity-lifetime products, rho tau equals 0. 1 OMEGA cm multiplied by (times) mu sec, have been achieved.

UR - http://www.scopus.com/inward/record.url?scp=0021393508&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021393508&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0021393508

VL - 23

SP - 322

EP - 325

BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

ER -