Control of charging in high aspect ratio plasma etching of integrated circuits

Z. L. Petrovic, T. Makabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we discuss some recent studies on control of charging during plasma etching of silicon dioxide in integrated circuits. These are required to reduce the damage on the devices and allow further increase in speed and capacity of integrated circuits. Such possibilities have a bearing in development of telecommunications. In particular we discuss how properties of incoming ions, geometry of the nanostructure, aspect ratio and plasma properties affect the kinetics of charging.

Original languageEnglish
Title of host publication6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings
PublisherIEEE Computer Society
Pages119-126
Number of pages8
Volume1
ISBN (Print)0780379632, 9780780379633
DOIs
Publication statusPublished - 2003
Event6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Nis, Serbia
Duration: 2003 Oct 12003 Oct 3

Other

Other6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003
CountrySerbia
CityNis
Period03/10/103/10/3

Fingerprint

Plasma etching
Integrated circuits
Aspect ratio
Bearings (structural)
Telecommunication
Nanostructures
Silica
Plasmas
Kinetics
Geometry
Ions

Keywords

  • charging
  • integrated circuits
  • ion energy distribution
  • plasma etching

ASJC Scopus subject areas

  • Computer Networks and Communications

Cite this

Petrovic, Z. L., & Makabe, T. (2003). Control of charging in high aspect ratio plasma etching of integrated circuits. In 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings (Vol. 1, pp. 119-126). [1246198] IEEE Computer Society. https://doi.org/10.1109/TELSKS.2003.1246198

Control of charging in high aspect ratio plasma etching of integrated circuits. / Petrovic, Z. L.; Makabe, T.

6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings. Vol. 1 IEEE Computer Society, 2003. p. 119-126 1246198.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Petrovic, ZL & Makabe, T 2003, Control of charging in high aspect ratio plasma etching of integrated circuits. in 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings. vol. 1, 1246198, IEEE Computer Society, pp. 119-126, 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003, Nis, Serbia, 03/10/1. https://doi.org/10.1109/TELSKS.2003.1246198
Petrovic ZL, Makabe T. Control of charging in high aspect ratio plasma etching of integrated circuits. In 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings. Vol. 1. IEEE Computer Society. 2003. p. 119-126. 1246198 https://doi.org/10.1109/TELSKS.2003.1246198
Petrovic, Z. L. ; Makabe, T. / Control of charging in high aspect ratio plasma etching of integrated circuits. 6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings. Vol. 1 IEEE Computer Society, 2003. pp. 119-126
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