Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates

Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticlepeer-review

83 Citations (Scopus)

Abstract

We have fabricated single-electron transistors (SETs) with Si nanocrystal floating gates, and experimentally demonstrated the control of the peak positions of Coulomb blockade oscillations. The positive voltage applied to the gate makes channel electrons tunnel into the floating dots, and the injected electrons raise the potential of quantum dots in SET, resulting in a shift of peak positions of Coulomb blockade oscillations. In addition, from the temperature dependence of device characteristics, it is confirmed that the potential fluctuations caused by random distribution of the Si nanocrystals have a slight influence on the shape of the Ids-Vg curves at practical high temperatures.

Original languageEnglish
Pages (from-to)209-211
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number2
DOIs
Publication statusPublished - 2000 Jan 10
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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