Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates

Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

83 Citations (Scopus)

Abstract

We have fabricated single-electron transistors (SETs) with Si nanocrystal floating gates, and experimentally demonstrated the control of the peak positions of Coulomb blockade oscillations. The positive voltage applied to the gate makes channel electrons tunnel into the floating dots, and the injected electrons raise the potential of quantum dots in SET, resulting in a shift of peak positions of Coulomb blockade oscillations. In addition, from the temperature dependence of device characteristics, it is confirmed that the potential fluctuations caused by random distribution of the Si nanocrystals have a slight influence on the shape of the Ids-Vg curves at practical high temperatures.

Original languageEnglish
Pages (from-to)209-211
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number2
Publication statusPublished - 2000 Jan 10
Externally publishedYes

Fingerprint

silicon transistors
single electron transistors
floating
nanocrystals
oscillations
silicon
statistical distributions
tunnels
electrons
quantum dots
temperature dependence
shift
electric potential
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates. / Takahashi, Nobuyoshi; Ishikuro, Hiroki; Hiramoto, Toshiro.

In: Applied Physics Letters, Vol. 76, No. 2, 10.01.2000, p. 209-211.

Research output: Contribution to journalArticle

@article{f3bc8b40d92946d58a022c943da5549e,
title = "Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates",
abstract = "We have fabricated single-electron transistors (SETs) with Si nanocrystal floating gates, and experimentally demonstrated the control of the peak positions of Coulomb blockade oscillations. The positive voltage applied to the gate makes channel electrons tunnel into the floating dots, and the injected electrons raise the potential of quantum dots in SET, resulting in a shift of peak positions of Coulomb blockade oscillations. In addition, from the temperature dependence of device characteristics, it is confirmed that the potential fluctuations caused by random distribution of the Si nanocrystals have a slight influence on the shape of the Ids-Vg curves at practical high temperatures.",
author = "Nobuyoshi Takahashi and Hiroki Ishikuro and Toshiro Hiramoto",
year = "2000",
month = "1",
day = "10",
language = "English",
volume = "76",
pages = "209--211",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates

AU - Takahashi, Nobuyoshi

AU - Ishikuro, Hiroki

AU - Hiramoto, Toshiro

PY - 2000/1/10

Y1 - 2000/1/10

N2 - We have fabricated single-electron transistors (SETs) with Si nanocrystal floating gates, and experimentally demonstrated the control of the peak positions of Coulomb blockade oscillations. The positive voltage applied to the gate makes channel electrons tunnel into the floating dots, and the injected electrons raise the potential of quantum dots in SET, resulting in a shift of peak positions of Coulomb blockade oscillations. In addition, from the temperature dependence of device characteristics, it is confirmed that the potential fluctuations caused by random distribution of the Si nanocrystals have a slight influence on the shape of the Ids-Vg curves at practical high temperatures.

AB - We have fabricated single-electron transistors (SETs) with Si nanocrystal floating gates, and experimentally demonstrated the control of the peak positions of Coulomb blockade oscillations. The positive voltage applied to the gate makes channel electrons tunnel into the floating dots, and the injected electrons raise the potential of quantum dots in SET, resulting in a shift of peak positions of Coulomb blockade oscillations. In addition, from the temperature dependence of device characteristics, it is confirmed that the potential fluctuations caused by random distribution of the Si nanocrystals have a slight influence on the shape of the Ids-Vg curves at practical high temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0001370307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001370307&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001370307

VL - 76

SP - 209

EP - 211

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -