Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K

Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, Shunri Oda

    Research output: Contribution to journalArticle

    25 Citations (Scopus)

    Abstract

    We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.

    Original languageEnglish
    Article number095002
    JournalApplied Physics Express
    Volume2
    Issue number9
    DOIs
    Publication statusPublished - 2009 Sep

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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