Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K

Gento Yamahata; Tetsuo Kodera; Hiroshi Mizuta; Ken Uchida; Shunri Oda

doi:10.1143/APEX.2.095002

Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K

Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, Shunri Oda

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.

Original language	English
Article number	095002
Journal	Applied Physics Express
Volume	2
Issue number	9
DOIs	https://doi.org/10.1143/APEX.2.095002
Publication status	Published - 2009 Sep 1

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ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

Yamahata, G., Kodera, T., Mizuta, H., Uchida, K., & Oda, S. (2009). Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K. Applied Physics Express, 2(9), [095002]. https://doi.org/10.1143/APEX.2.095002

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Access to Document

10.1143/APEX.2.095002