Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K

Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, Shunri Oda

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.

Original languageEnglish
Article number095002
JournalApplied Physics Express
Volume2
Issue number9
DOIs
Publication statusPublished - 2009 Sep
Externally publishedYes

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Semiconductor quantum dots
Electrostatics
quantum dots
electrostatics
Silicon
silicon
electrons
diagrams
Modulation
modulation
Electrons
Temperature
temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K. / Yamahata, Gento; Kodera, Tetsuo; Mizuta, Hiroshi; Uchida, Ken; Oda, Shunri.

In: Applied Physics Express, Vol. 2, No. 9, 095002, 09.2009.

Research output: Contribution to journalArticle

Yamahata, Gento ; Kodera, Tetsuo ; Mizuta, Hiroshi ; Uchida, Ken ; Oda, Shunri. / Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K. In: Applied Physics Express. 2009 ; Vol. 2, No. 9.
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