Abstract
We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.
| Original language | English |
|---|---|
| Article number | 095002 |
| Journal | Applied Physics Express |
| Volume | 2 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2009 Sep |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K. / Yamahata, Gento; Kodera, Tetsuo; Mizuta, Hiroshi; Uchida, Ken; Oda, Shunri.
In: Applied Physics Express, Vol. 2, No. 9, 095002, 09.2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K
AU - Yamahata, Gento
AU - Kodera, Tetsuo
AU - Mizuta, Hiroshi
AU - Uchida, Ken
AU - Oda, Shunri
PY - 2009/9
Y1 - 2009/9
N2 - We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.
AB - We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.
UR - http://www.scopus.com/inward/record.url?scp=70349157553&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349157553&partnerID=8YFLogxK
U2 - 10.1143/APEX.2.095002
DO - 10.1143/APEX.2.095002
M3 - Article
AN - SCOPUS:70349157553
VL - 2
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 9
M1 - 095002
ER -