Control of optical and electrical properties of ZnO films for photovoltaic applications

Ralf Hunger; Kakuya Iwata; Paul Fons; Akimasa Yamada; Koji Matsubara; Shigeru Niki; Ken Nakahara; Hidemi Takasu

doi:10.1557/proc-668-h2.8

Control of optical and electrical properties of ZnO films for photovoltaic applications

Ralf Hunger, Kakuya Iwata, Paul Fons, Akimasa Yamada, Koji Matsubara, Shigeru Niki, Ken Nakahara, Hidemi Takasu

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10^-4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10^-4 Ωcm, electron mobility μ_e=37 cm²/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μ_e=30 cm²/Vs, T=90%). By the incorporation of Mg, conducting Mg_0.3Zn_0.7O films with an increased band gap up to ∼ 4eV were realized.

Original language	English
Pages (from-to)	H281-H286
Journal	Materials Research Society Symposium - Proceedings
Volume	668
DOIs	https://doi.org/10.1557/proc-668-h2.8
Publication status	Published - 2001 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Hunger, R., Iwata, K., Fons, P., Yamada, A., Matsubara, K., Niki, S., Nakahara, K., & Takasu, H. (2001). Control of optical and electrical properties of ZnO films for photovoltaic applications. Materials Research Society Symposium - Proceedings, 668, H281-H286. https://doi.org/10.1557/proc-668-h2.8

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abstract = "ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10-4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10-4 Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.",

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AU - Hunger, Ralf

AU - Iwata, Kakuya

AU - Fons, Paul

AU - Yamada, Akimasa

AU - Matsubara, Koji

AU - Niki, Shigeru

AU - Nakahara, Ken

AU - Takasu, Hidemi

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N2 - ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10-4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10-4 Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.

AB - ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10-4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10-4 Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.

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