Control of optical and electrical properties of ZnO films for photovoltaic applications

Ralf Hunger; Kakuya Iwata; Paul Fons; Akimasa Yamada; Koji Matsubara; Shigeru Niki; Ken Nakahara; Hidemi Takasu

doi:10.1557/proc-668-h2.8

Control of optical and electrical properties of ZnO films for photovoltaic applications

Ralf Hunger, Kakuya Iwata, Paul Fons, Akimasa Yamada, Koji Matsubara, Shigeru Niki, Ken Nakahara, Hidemi Takasu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10^-4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10^-4 Ωcm, electron mobility μ_e=37 cm²/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μ_e=30 cm²/Vs, T=90%). By the incorporation of Mg, conducting Mg_0.3Zn_0.7O films with an increased band gap up to ∼ 4eV were realized.

Original language	English
Pages (from-to)	H281-H286
Journal	Materials Research Society Symposium - Proceedings
Volume	668
DOIs	https://doi.org/10.1557/proc-668-h2.8
Publication status	Published - 2001 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/proc-668-h2.8

Cite this

@article{d154b98cc07f44a0827ed57629e424a5,

title = "Control of optical and electrical properties of ZnO films for photovoltaic applications",

abstract = "ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10-4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10-4 Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.",

author = "Ralf Hunger and Kakuya Iwata and Paul Fons and Akimasa Yamada and Koji Matsubara and Shigeru Niki and Ken Nakahara and Hidemi Takasu",

year = "2001",

month = jan,

day = "1",

doi = "10.1557/proc-668-h2.8",

language = "English",

volume = "668",

pages = "H281--H286",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Control of optical and electrical properties of ZnO films for photovoltaic applications

AU - Hunger, Ralf

AU - Iwata, Kakuya

AU - Fons, Paul

AU - Yamada, Akimasa

AU - Matsubara, Koji

AU - Niki, Shigeru

AU - Nakahara, Ken

AU - Takasu, Hidemi

PY - 2001/1/1

Y1 - 2001/1/1

N2 - ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10-4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10-4 Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.

AB - ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10-4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10-4 Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.

UR - http://www.scopus.com/inward/record.url?scp=0035556695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035556695&partnerID=8YFLogxK

U2 - 10.1557/proc-668-h2.8

DO - 10.1557/proc-668-h2.8

M3 - Article

AN - SCOPUS:0035556695

VL - 668

SP - H281-H286

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -

Control of optical and electrical properties of ZnO films for photovoltaic applications

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this