Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents

J. Kikuchi, S. Akiyoshi, H. Terada, Y. Nozaki, K. Matsuyama

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Reversal of spin orientation using current-carrying conductors are studied for a micro-structured pseudo-spin valve material of Co79Fe 21(3 nm)/Cu(4nm)/Co73Fe27(4nm) by magnetoresistive measurements. Selective spin reorientation in one of the two magnetic layers are successfully performed with practical current amplitude smaller than 10mA/μm. Compositionally differentiated coercive field in the CoFe films would be a dominant cause for the selectivity of the spin reorientation.

Original languageEnglish
Pages (from-to)1895-1897
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberIII
DOIs
Publication statusPublished - 2004 May
Externally publishedYes

Keywords

  • CoFe
  • Magnetic random access memory
  • Spin valve

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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