Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents

J. Kikuchi, S. Akiyoshi, H. Terada, Yukio Nozaki, K. Matsuyama

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Reversal of spin orientation using current-carrying conductors are studied for a micro-structured pseudo-spin valve material of Co79Fe 21(3 nm)/Cu(4nm)/Co73Fe27(4nm) by magnetoresistive measurements. Selective spin reorientation in one of the two magnetic layers are successfully performed with practical current amplitude smaller than 10mA/μm. Compositionally differentiated coercive field in the CoFe films would be a dominant cause for the selectivity of the spin reorientation.

Original languageEnglish
Pages (from-to)1895-1897
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberIII
DOIs
Publication statusPublished - 2004 May
Externally publishedYes

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conductors
cells
retraining
selectivity
causes

Keywords

  • CoFe
  • Magnetic random access memory
  • Spin valve

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents. / Kikuchi, J.; Akiyoshi, S.; Terada, H.; Nozaki, Yukio; Matsuyama, K.

In: Journal of Magnetism and Magnetic Materials, Vol. 272-276, No. III, 05.2004, p. 1895-1897.

Research output: Contribution to journalArticle

Kikuchi, J. ; Akiyoshi, S. ; Terada, H. ; Nozaki, Yukio ; Matsuyama, K. / Controlling of spin orientation in a pseudo-spin valve MRAM cell with pulsed conductor currents. In: Journal of Magnetism and Magnetic Materials. 2004 ; Vol. 272-276, No. III. pp. 1895-1897.
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