Reversal of spin orientation using current-carrying conductors are studied for a micro-structured pseudo-spin valve material of Co79Fe 21(3 nm)/Cu(4nm)/Co73Fe27(4nm) by magnetoresistive measurements. Selective spin reorientation in one of the two magnetic layers are successfully performed with practical current amplitude smaller than 10mA/μm. Compositionally differentiated coercive field in the CoFe films would be a dominant cause for the selectivity of the spin reorientation.
- Magnetic random access memory
- Spin valve
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics