Abstract
Discussed are the experimental and numerical studies on nucleation and erasing of sub-μm2 domains in spin valve strips, which are essential operations in a high density magnetic random access memory (MRAM) and important for design consideration of a device structure. The device fabricated based on these studies is also described.
Original language | English |
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Pages (from-to) | HA-01 |
Journal | Digests of the Intermag Conference |
Publication status | Published - 1999 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea Duration: 1999 May 18 → 1999 May 21 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering