Controlling of sub-μm2 domains in spin valve strips with conductor current

K. Matsuyama, H. Hosokawa, Y. Nozaki

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Nucleation and erasing of sub-μm2 domains in spin valve strips have been performed with current pulses applied through conductors. A spin valve material of NiFe/Co/Cu/Co was deposited by magnetron sputtering and patterned into sense lines of 40 parallel strips with 0.4 μm width and 2 μm pitch. Selective domain nucleation under parallel conductors with l μm width and 2.6 μm pitch has been confirmed by the current induced MR change. Pulses with opposite polarity performed erasing of nucleated domains. Reproducible MR change with a variation of ±10 % relative to the mid value was realized in 104 operations of the domain nucleation process.

Original languageEnglish
Pages (from-to)2826-2828
Number of pages3
JournalIEEE Transactions on Magnetics
Volume35
Issue number5 PART 1
DOIs
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Keywords

  • Eb lithography
  • MRAM
  • Magnetic domain
  • Magnetization reversal
  • Spin valve

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Controlling of sub-μm<sup>2</sup> domains in spin valve strips with conductor current'. Together they form a unique fingerprint.

  • Cite this