Controlling of sub-μm2 domains in spin valve strips with conductor current

K. Matsuyama, H. Hosokawa, Yukio Nozaki

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Nucleation and erasing of sub-μm2 domains in spin valve strips have been performed with current pulses applied through conductors. A spin valve material of NiFe/Co/Cu/Co was deposited by magnetron sputtering and patterned into sense lines of 40 parallel strips with 0.4 μm width and 2 μm pitch. Selective domain nucleation under parallel conductors with l μm width and 2.6 μm pitch has been confirmed by the current induced MR change. Pulses with opposite polarity performed erasing of nucleated domains. Reproducible MR change with a variation of ±10 % relative to the mid value was realized in 104 operations of the domain nucleation process.

Original languageEnglish
Pages (from-to)2826-2828
Number of pages3
JournalIEEE Transactions on Magnetics
Volume35
Issue number5 PART 1
DOIs
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

strip
Nucleation
conductors
nucleation
Induced currents
Magnetron sputtering
pulses
polarity
magnetron sputtering

Keywords

  • Eb lithography
  • Magnetic domain
  • Magnetization reversal
  • MRAM
  • Spin valve

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Controlling of sub-μm2 domains in spin valve strips with conductor current. / Matsuyama, K.; Hosokawa, H.; Nozaki, Yukio.

In: IEEE Transactions on Magnetics, Vol. 35, No. 5 PART 1, 1999, p. 2826-2828.

Research output: Contribution to journalArticle

Matsuyama, K. ; Hosokawa, H. ; Nozaki, Yukio. / Controlling of sub-μm2 domains in spin valve strips with conductor current. In: IEEE Transactions on Magnetics. 1999 ; Vol. 35, No. 5 PART 1. pp. 2826-2828.
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