Correlated diffusion of silicon and boron in thermally grown SiO 2

Masashi Uematsu; Hiroyuki Kageshima; Yasuo Takahashi; Shigeto Fukatsu; Kohei M. Itoh; Kenji Shiraishi

doi:10.1063/1.1771811

Correlated diffusion of silicon and boron in thermally grown SiO ₂

Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The Si self-diffusion and B diffusion in SiO₂ in thermally grown ²⁸SiO₂ co-implanted with ₃₀Si and B were discussed. It was found that B diffusivity increased with decreasing distance between the implanted B and Si/SiO₂ interface. It was found that SiO molecules enhanced not only Si self diffusion but also B diffusion. Analysis shows that the diffusivities of both Si and B increased with higher B concentration in SiO₂.

Original language	English
Pages (from-to)	221-223
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	2
DOIs	https://doi.org/10.1063/1.1771811
Publication status	Published - 2004 Jul 12

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1771811

Cite this

@article{89765abadeb34e96b5299a18e16d8c0d,

title = "Correlated diffusion of silicon and boron in thermally grown SiO 2",

abstract = "The Si self-diffusion and B diffusion in SiO2 in thermally grown 28SiO2 co-implanted with 30Si and B were discussed. It was found that B diffusivity increased with decreasing distance between the implanted B and Si/SiO2 interface. It was found that SiO molecules enhanced not only Si self diffusion but also B diffusion. Analysis shows that the diffusivities of both Si and B increased with higher B concentration in SiO2.",

author = "Masashi Uematsu and Hiroyuki Kageshima and Yasuo Takahashi and Shigeto Fukatsu and Itoh, {Kohei M.} and Kenji Shiraishi",

year = "2004",

month = jul,

day = "12",

doi = "10.1063/1.1771811",

language = "English",

volume = "85",

pages = "221--223",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Correlated diffusion of silicon and boron in thermally grown SiO 2

AU - Uematsu, Masashi

AU - Kageshima, Hiroyuki

AU - Takahashi, Yasuo

AU - Fukatsu, Shigeto

AU - Itoh, Kohei M.

AU - Shiraishi, Kenji

PY - 2004/7/12

Y1 - 2004/7/12

N2 - The Si self-diffusion and B diffusion in SiO2 in thermally grown 28SiO2 co-implanted with 30Si and B were discussed. It was found that B diffusivity increased with decreasing distance between the implanted B and Si/SiO2 interface. It was found that SiO molecules enhanced not only Si self diffusion but also B diffusion. Analysis shows that the diffusivities of both Si and B increased with higher B concentration in SiO2.

AB - The Si self-diffusion and B diffusion in SiO2 in thermally grown 28SiO2 co-implanted with 30Si and B were discussed. It was found that B diffusivity increased with decreasing distance between the implanted B and Si/SiO2 interface. It was found that SiO molecules enhanced not only Si self diffusion but also B diffusion. Analysis shows that the diffusivities of both Si and B increased with higher B concentration in SiO2.

UR - http://www.scopus.com/inward/record.url?scp=3242884085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242884085&partnerID=8YFLogxK

U2 - 10.1063/1.1771811

DO - 10.1063/1.1771811

M3 - Article

AN - SCOPUS:3242884085

SN - 0003-6951

VL - 85

SP - 221

EP - 223

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Correlated diffusion of silicon and boron in thermally grown SiO ₂

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this