Correlated diffusion of silicon and boron in thermally grown SiO 2

Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi

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21 Citations (Scopus)

Abstract

The Si self-diffusion and B diffusion in SiO2 in thermally grown 28SiO2 co-implanted with 30Si and B were discussed. It was found that B diffusivity increased with decreasing distance between the implanted B and Si/SiO2 interface. It was found that SiO molecules enhanced not only Si self diffusion but also B diffusion. Analysis shows that the diffusivities of both Si and B increased with higher B concentration in SiO2.

Original languageEnglish
Pages (from-to)221-223
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number2
DOIs
Publication statusPublished - 2004 Jul 12

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Uematsu, M., Kageshima, H., Takahashi, Y., Fukatsu, S., Itoh, K. M., & Shiraishi, K. (2004). Correlated diffusion of silicon and boron in thermally grown SiO 2. Applied Physics Letters, 85(2), 221-223. https://doi.org/10.1063/1.1771811