Correlated diffusion of silicon and boron in thermally grown SiO 2

Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

The Si self-diffusion and B diffusion in SiO2 in thermally grown 28SiO2 co-implanted with 30Si and B were discussed. It was found that B diffusivity increased with decreasing distance between the implanted B and Si/SiO2 interface. It was found that SiO molecules enhanced not only Si self diffusion but also B diffusion. Analysis shows that the diffusivities of both Si and B increased with higher B concentration in SiO2.

Original languageEnglish
Pages (from-to)221-223
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number2
DOIs
Publication statusPublished - 2004 Jul 12

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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