The Si self-diffusion and B diffusion in SiO2 in thermally grown 28SiO2 co-implanted with 30Si and B were discussed. It was found that B diffusivity increased with decreasing distance between the implanted B and Si/SiO2 interface. It was found that SiO molecules enhanced not only Si self diffusion but also B diffusion. Analysis shows that the diffusivities of both Si and B increased with higher B concentration in SiO2.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Jul 12|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)