Correlated to random transition of ionized impurity distribution in n-type Ge: (As, Ga)

Jiro Kato, Kohei M. Itoh, Eugene E. Haller

Research output: Contribution to journalArticle

Abstract

We discuss the broadening of ground-state to bounded excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible, a unique determination of the ionized impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized impurity distribution as a function of the ionized impurity concentration and of temperature.

Original languageEnglish
Pages (from-to)521-524
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - 2001 Dec 1

Keywords

  • Compensated semiconductor
  • Impurity absorption
  • Impurity distribution

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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