Correlated to random transition of ionized impurity distribution in n-type Ge: (As, Ga)

Jiro Kato; Kohei M. Itoh; Eugene E. Haller

doi:10.1016/S0921-4526(01)00751-7

Correlated to random transition of ionized impurity distribution in n-type Ge: (As, Ga)

Jiro Kato, Kohei M. Itoh, Eugene E. Haller

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

Abstract

We discuss the broadening of ground-state to bounded excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible, a unique determination of the ionized impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized impurity distribution as a function of the ionized impurity concentration and of temperature.

Original language	English
Pages (from-to)	521-524
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00751-7
Publication status	Published - 2001 Dec

Keywords

Compensated semiconductor
Impurity absorption
Impurity distribution

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)00751-7

Cite this

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title = "Correlated to random transition of ionized impurity distribution in n-type Ge: (As, Ga)",

abstract = "We discuss the broadening of ground-state to bounded excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible, a unique determination of the ionized impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized impurity distribution as a function of the ionized impurity concentration and of temperature.",

keywords = "Compensated semiconductor, Impurity absorption, Impurity distribution",

author = "Jiro Kato and Itoh, {Kohei M.} and Haller, {Eugene E.}",

year = "2001",

month = dec,

doi = "10.1016/S0921-4526(01)00751-7",

language = "English",

volume = "308-310",

pages = "521--524",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

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TY - JOUR

T1 - Correlated to random transition of ionized impurity distribution in n-type Ge

T2 - (As, Ga)

AU - Kato, Jiro

AU - Itoh, Kohei M.

AU - Haller, Eugene E.

PY - 2001/12

Y1 - 2001/12

N2 - We discuss the broadening of ground-state to bounded excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible, a unique determination of the ionized impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized impurity distribution as a function of the ionized impurity concentration and of temperature.

AB - We discuss the broadening of ground-state to bounded excited-state transitions of shallow donors in strongly compensated n-type Ge:(As, Ga) in the presence of electric fields and their gradients, arising from randomly distributed ionized impurities. Quantitative comparison of the experimentally obtained linewidths with Monte Carlo simulation results makes possible, a unique determination of the ionized impurity distribution in the samples. We present clear evidence for the random-to-correlated transition of the ionized impurity distribution as a function of the ionized impurity concentration and of temperature.

KW - Compensated semiconductor

KW - Impurity absorption

KW - Impurity distribution

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UR - http://www.scopus.com/inward/citedby.url?scp=0035677714&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)00751-7

DO - 10.1016/S0921-4526(01)00751-7

M3 - Article

AN - SCOPUS:0035677714

SN - 0921-4526

VL - 308-310

SP - 521

EP - 524

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Correlated to random transition of ionized impurity distribution in n-type Ge: (As, Ga)

Abstract

Keywords

ASJC Scopus subject areas

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